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Current-driven magnetic domain-wall logic

Type of publication Peer-reviewed
Publikationsform Original article (peer-reviewed)
Author Luo Z. C., Hrabec A., Dao T. P., Sala G., Finizio S., Feng J. X., Mayr S., Raabe J., Gambardella P., Heyderman L. J.,
Project Spin-orbitronics in ferromagnets and antiferromagnets
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Original article (peer-reviewed)

Journal Nature
Volume (Issue) 579(7798)
Page(s) 214 - 214
ISBN 0028-0836
Title of proceedings Nature
DOI 10.1038/s41586-020-2061-y

Open Access

URL https://www.dora.lib4ri.ch/psi/islandora/object/psi:30444
Type of Open Access Repository (Green Open Access)

Abstract

Spin-based logic architectures provide nonvolatile data retention, near-zero leakage, and scalability, extending the technology roadmap beyond complementary metal-oxide-semiconductor logic(1-13). Architectures based on magnetic domain walls take advantage of the fast motion, high density, non-volatility and flexible design of domain walls to process and store information(1,3,14-16). Such schemes, however, rely on domain-wall manipulation and clocking using an external magnetic field, which limits their implementation in dense, large-scale chips. Here we demonstrate a method for performing all-electric logic operations and cascading using domain-wall racetracks. We exploit the chiral coupling between neighbouring magnetic domains induced by the interfacial Dzyaloshinskii-Moriya interaction(17-20), which promotes non-collinear spin alignment, to realize a domain-wall inverter, the essential basic building block in all implementations of Boolean logic. We then fabricate reconfigurable NAND and NOR logic gates, and perform operations with current-induced domain-wall motion. Finally, we cascade several NAND gates to build XOR and full adder gates, demonstrating electrical control of magnetic data and device interconnection in logic circuits. Our work provides a viable platform for scalable all-electric magnetic logic, paving the way for memory-in-logic applications.
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