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Si/SiGe:C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications

Type of publication Peer-reviewed
Publikationsform Original article (peer-reviewed)
Author Chevalier Pascal, Jungemann C., Lovblom Rickard, Maneux Cristell, Ostinelli Olivier, Pawlak Andreas, Rinaldi Niccolo, Rucker Holger, Wedel Gerald, Zimmer Thomas, Schroter Michael, Bolognesi Colombo R., d'Alessandro Vincenzo, Alexandrova Maria, Bock Josef, Flickiger Ralf, Fregonese Sebastien, Heinemann Bernd,
Project ULTIMATE: Upper Limit Technology Investigations Mandatory to Attain Terahertz Electronics
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Original article (peer-reviewed)

Journal Proceedings of the IEEE
Volume (Issue) 105(6)
Page(s) 1035 - 1050
Title of proceedings Proceedings of the IEEE
DOI 10.1109/jproc.2017.2669087