nonlinear photonics; quantum optics; integrated photonic devices
Liu Junqiu, Huang Guanhao, Wang Rui Ning, He Jijun, Raja Arslan S., Liu Tianyi, Engelsen Nils J., Kippenberg Tobias J. (2021), High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits, in
Nature Communications, 12(1), 2236-2236.
Tikan A., Riemensberger J., Komagata K., Hönl S., Churaev M., Skehan C., Guo H., Wang R. N., Liu J., Seidler P., Kippenberg T. J. (2021), Emergent nonlinear phenomena in a driven dissipative photonic dimer, in
Nature Physics, 17(5), 604-610.
Sahin Ezgi, Zabelich Boris, Yakar Ozan, Nitiss Edgars, Liu Junqiu, Wang Rui N., Kippenberg Tobias J., Brès Camille-Sophie (2021), Difference-frequency generation in optically poled silicon nitride waveguides, in
Nanophotonics, 0(0), 1-8.
He Jijun, Paradisanos Ioannis, Liu Tianyi, Cadore Alisson R., Liu Junqiu, Churaev Mikhail, Wang Rui Ning, Raja Arslan S., Javerzac-Galy Clément, Roelli Philippe, Fazio Domenico De, Rosa Barbara L. T., Tongay Sefaattin, Soavi Giancarlo, Ferrari Andrea C., Kippenberg Tobias J. (2021), Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials, in
Nano Letters, 21(7), 2709-2718.
AndersonMiles, LihachevGrigory, WengWenle, LiuJunqiu, KippenbergTobias, https://arxiv.org/abs/2007.14507.
GuoJoel, ChangLin, Ning WangRui, Wenle Weng, PetersJonathan, XieWeiqiang, ZhangZeyu, RiemensbergerJohann, SelvidgeJennifer, KippenbergTobias, BowersJohn, Xiang Chao, Liu Jinqiu, Laser soliton microcombs on silicon.
Hao Tian, SiddharthAnat, Rui Ning Wang, BlésinTerence, HeJijun, KippenbergTobias, BhaveSunil, Magnetic-free silicon nitride integrated optical isolator, 1.
Tkin Alexey, TusninAleksandr, RiemensbergerJohann, ChuraevMikhail, KomagataKenichi, JiXinru, RiuNin Wang, LiuJinqiu, KippenbergTobias,
Symmetry protection of topological states in multimode photonic resonator chains, arXiv, USA.
LihachevGrigorii, RiemensbergerJohann, WengWenle, LiuJinqiu, TianHao, SiddharthAnat, Viacheslav Snigirev, Ning WangRui, He Jijun, BhaveSunil, KippenbergTobias, Ultralow-noise frequency-agile photonic integrated lasers.
High-yield, wafer-scale fabrication of ultralow-loss, dispersion-engineered silicon nitride photonic circuits
| Author |
Liu, Junqiu; Huang, Guanhao; Wang, Rui Ning; He, Jijun; Raja, Arslan S.; Liu, Tianyi; Engelsen, Nils J.; Kippenberg, Tobias J. |
| Publication date |
16.12.2021 |
| Persistent Identifier (PID) |
10.5281/zenodo.4273990 |
| Repository |
ZENODO
|
| Abstract |
Abstract Low-loss photonic integrated circuits and microresonators have enabled a wide range of applications, such as narrow-linewidth lasers and chip-scale frequency combs. To translate these into a widespread technology, attaining ultralow optical losses with established foundry manufacturing is critical. Recent advances in integrated Si 3 N 4 photonics have shown that ultralow-loss, dispersion-engineered microresonators with quality factors Q > 10 × 10 6 can be attained at die-level throughput. Yet, current fabrication techniques do not have sufficiently high yield and performance for existing and emerging applications, such as integrated travelling-wave parametric amplifiers that require meter-long photonic circuits. Here we demonstrate a fabrication technology that meets all requirements on wafer-level yield, performance and length scale. Photonic microresonators with a mean Q factor exceeding 30 × 10 6 , corresponding to 1.0 dB m −1 optical loss, are obtained over full 4-inch wafers, as determined from a statistical analysis of tens of thousands of optical resonances, and confirmed via cavity ringdown with 19 ns photon storage time. The process operates over large areas with high yield, enabling 1-meter-long spiral waveguides with 2.4 dB m −1 loss in dies of only 5 × 5 mm 2 size. Using a response measurement self-calibrated via the Kerr nonlinearity, we reveal that the intrinsic absorption-limited Q factor of our Si 3 N 4 microresonators can exceed 2 × 10 8 . This absorption loss is sufficiently low such that the Kerr nonlinearity dominates the microresonator’s response even in the audio frequency band. Transferring this Si 3 N 4 technology to commercial foundries can significantly improve the performance and capabilities of integrated photonics.
Emergent nonlinear phenomena in a driven dissipative photonic dimer
| Author |
Tikan, A.; Riemensberger, J.; Komagata, K.; Hönl, S.; Churaev, M.; Skehan, C.; Guo, H.; Wang, R. N.; Liu, J.; Seidler, P.; Kippenberg, T. J. |
| Publication date |
15.05.2021 |
| Persistent Identifier (PID) |
10.1038/s41567-020-01159-y |
| Repository |
ZENODO
|
|
Low-Loss Integrated Nanophotonic Circuits with Layered Semiconductor Materials
| Author |
He, Jijun; Paradisanos, Ioannis; Liu, Tianyi; Cadore, Alisson R.; Liu, Junqiu; Churaev, Mikhail; Wang, Rui Ning; Raja, Arslan S.; Javerzac-Galy, Clément; Roelli, Philippe; Fazio, Domenico De; Rosa, Barbara L. T.; Tongay, Sefaattin; Soavi, Giancarlo; Ferrari, Andrea C.; Kippenberg, Tobias J. |
| Publication date |
14.04.2021 |
| Persistent Identifier (PID) |
10.1021/acs.nanolett.0c04149 |
| Repository |
ZENODO
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Low loss optical fibers are the backbone of our information society. Ultralow-loss integrated photonic circuits are used in a wide range of applications ranging from passive devices, lasers, to nonlinear and quantum optical devices. Achieving low loss integrated waveguides requires in particular lithography patterning at the nanometer scale. Dense waveguide patterns require fast lithography process, thus direct writing such as electron beam lithography (EBL) is not practical, due to the low yield and high cost. This can be overcome with DUV (deep ultra-violet) stepper lithography - which offers a unique combination of nm sized features with fast processing. Taken together, DUV lithography is uniquely suited for the fabrication of photonic circuits with high yield, speed, free of stitching errors, with high reliability. DUV lithography is a widely used technology in industry for wafer scale batch processing, but has also unique merits for academic research at the leading edge. Although the present proposal targets integrated photonics, DUV steppers are equally suited for research in MEMS, NEMS, micro-electronics, or meta-materials.