atomistic simulation; computer aided design; device modeling; nanoelectronics
Bauer Dominik, Bunjaku Teutë, Pedersen Andreas, Luisier Mathieu (2017), Electronic properties of lithiated SnO-based anode materials, in
Journal of Applied Physics, 122(5), 055105-055105.
Stieger Christian, Szabo Aron, Bunjaku Teutë, Luisier Mathieu (2017), Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials, in
Journal of Applied Physics, 122(4), 045708-045708.
Daus Alwin, Vogt Christian, Munzenrieder Niko, Petti Luisa, Knobelspies Stefan, Cantarella Giuseppe, Luisier Mathieu, Salvatore Giovanni A., Troster Gerhard (2017), Charge Trapping Mechanism Leading to Sub-60-mV/decade-Swing FETs, in
IEEE Transactions on Electron Devices, 64(7), 2789-2796.
Stieger Christian, Szabo Aron, Bunjaku Teute, Luisier Mathieu (2017), Ab-initio modeling of self-heating in single-layer MoS 2 transistors, in
2017 75th Device Research Conference (DRC), South Bend, IN, USAIEEE, New York.
Lee Y., Bescond M., Cavassilas N., Logoteta D., Raymond L., Lannoo M., Luisier M. (2017), Quantum treatment of phonon scattering for modeling of three-dimensional atomistic transport, in
Physical Review B, 95(20), 201412-201412.
Pedersen Andreas, Bieri Michael, Luisier Mathieu, Pizzagalli Laurent (2017), Lithiation of Silicon Nanoclusters, in
Physical Review Applied, 7(5), 054012-054012.
Jin Seonghoon, Park Hong-Hyun, Luisier Mathieu, Choi Woosung, Kim Jongchol, Lee Keun-Ho (2017), Band-to-Band Tunneling in SiGe: Influence of Alloy Scattering, in
IEEE Electron Device Letters, 38(4), 422-425.
Rhyner Reto, Luisier Mathieu (2017), Influence of thermal losses at the gate contact of Si nanowire transistors: A phenomenological treatment in quantum transport theory, in
Applied Physics Letters, 110(10), 103508-103508.
Gooth Johannes, Borg Mattias, Schmid Heinz, Schaller Vanessa, Wirths Stephan, Moselund Kirsten, Luisier Mathieu, Karg Siegfried, Riel Heike (2017), Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects, in
Nano Letters, 17(4), 2596-2602.
Lu Anh Khoa Augustin, Pourtois Geoffrey, Luisier Mathieu, Radu Iuliana P., Houssa Michel (2017), On the electrostatic control achieved in transistors based on multilayered MoS 2 : A first-principles study, in
Journal of Applied Physics, 121(4), 044505-044505.
N. Raja Shyamprasad, Rhyner Reto, Vuttivorakulchai Kantawong, Luisier Mathieu, Poulikakos Dimos (2017), Length Scale of Diffusive Phonon Transport in Suspended Thin Silicon Nanowires, in
Nano Letters, 17(1), 276-283.
Daus Alwin, Vogt Christian, Münzenrieder Niko, Petti Luisa, Knobelspies Stefan, Cantarella Giuseppe, Luisier Mathieu, Salvatore Giovanni A., Tröster Gerhard (2016), Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators, in
Journal of Applied Physics, 120(24), 244501-244501.
Luisier M., Szabo A., Stieger C., Klinkert C., Bruck S., Jain A., Novotny L. (2016), First-principles simulations of 2-D semiconductor devices: Mobility, I-V characteristics, and contact resistance, in
2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USAIEEE, New York.
Carrillo-Nunez Hamilton, Stieger Christian, Luisier Mathieu, Schenk Andreas (2016), Performance predictions of single-layer In-V double-gate n- and p-type field-effect transistors, in
2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USAIEEE, New York.
Rau M., Caruso E., Lizzit D., Palestri P., Esseni D., Schenk A., Selmi L., Luisier M. (2016), Performance projection of III-V ultra-thin-body, FinFET, and nanowire MOSFETs for two next-generation technology nodes, in
2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USAIEEE, New York.
Luisier Mathieu, Rhyner Reto, Szabo Aron, Pedersen Andreas (2016), Atomistic simulation of nanodevices, in
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, GermanyIEEE, New York.
Aguirre P., Carrillo-Nunez H., Ziegler A., Luisier M., Schenk A. (2016), Drift-diffusion quantum corrections for In 0.53 Ga 0.47 As double gate ultra-thin-body FETs, in
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, GermanyIEEE, New York.
Carrillo-Nunez Hamilton, Rhyner Reto, Luisier Mathieu, Schenk Andreas (2016), Effect of surface roughness and phonon scattering on extremely narrow InAs-Si Nanowire TFETs, in
ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne, SwitzerlandIEEE, New York.
Vuttivorakulchai Kantawong, Luisier Mathieu, Schenk Andreas (2016), Modeling the thermal conductivity of Si nanowires with surface roughness, in
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, GermanyIEEE, New York.
Rau Martin, Markussen Troels, Caruso Enrico, Esseni David, Gnani Elena, Gnudi Antonio, Khomyakov Petr A., Luisier Mathieu, Osgnach Patrik, Palestri Pierpaolo, Reggiani Susanna, Schenk Andreas, Selmi Luca, Stokbro Kurt (2016), Performance study of strained III–V materials for ultra-thin body transistor applications, in
ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne, SwitzerlandIEEE, New York.
Lenarczyk P., Luisier M. (2016), Physical modeling of ferroelectric field-effect transistors in the negative capacitance regime, in
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, GermanyIEEE, New York.
Sant Saurabh, Carrillo-Nunez Hamilton, Luisier Mathieu, Schenk Andreas (2016), Transfer matrix based semiclassical model for field-induced and geometrical quantum confinement in tunnel FETs, in
2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, GermanyIEEE, New York.
Bani-Hashemian Mohammad Hossein, Brück Sascha, Luisier Mathieu, VandeVondele Joost (2016), A generalized Poisson solver for first-principles device simulations, in
The Journal of Chemical Physics, 144(4), 044113-044113.
Ziegler Anne, Frey Martin, Smith Lee, Luisier Mathieu (2016), A Nonparabolic Bandstructure Model for Computationally Efficient Quantum Transport Simulations, in
IEEE Transactions on Electron Devices, 63(5), 2050-2056.
Emboras Alexandros, Niegemann Jens, Ma Ping, Haffner Christian, Pedersen Andreas, Luisier Mathieu, Hafner Christian, Schimmel Thomas, Leuthold Juerg (2016), Atomic Scale Plasmonic Switch, in
Nano Letters, 16(1), 709-714.
Zerveas George, Caruso Enrico, Baccarani Giorgio, Czornomaz Lukas, Daix Nicolas, Esseni David, Gnani Elena, Gnudi Antonio, Grassi Roberto, Luisier Mathieu, Markussen Troels, Osgnach Patrik, Palestri Pierpaolo, Schenk Andreas, Selmi Luca, Sousa Marilyne, Stokbro Kurt, Visciarelli Michele (2016), Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells, in
Solid-State Electronics, 115, 92-102.
Lee Y., Lannoo M., Cavassilas N., Luisier M., Bescond M. (2016), Efficient quantum modeling of inelastic interactions in nanodevices, in
Physical Review B, 93(20), 205411.
Rhyner Reto, Luisier Mathieu (2016), Minimizing Self-Heating and Heat Dissipation in Ultrascaled Nanowire Transistors, in
Nano Letters, 16(2), 1022-1026.
Bozyigit Deniz, Yazdani Nuri, Yarema Maksym, Yarema Olesya, Lin Weyde Matteo Mario, Volk Sebastian, Vuttivorakulchai Kantawong, Luisier Mathieu, Juranyi Fanni, Wood Vanessa (2016), Soft surfaces of nanomaterials enable strong phonon interactions, in
Nature, 531(7596), 618-622.
Ziegler Anne, Frey Martin, Smith Lee, Luisier Mathieu (2015), A computationally efficient non-parabolic bandstructure model for quantum transport simulations, in
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USAIEEE, New York.
Carrillo-Nunez Hamilton, Luisier Mathieu, Schenk Andreas (2015), Analysis of InAs-Si heterojunction double-gate tunnel FETs with vertical tunneling paths, in
ESSDERC 2015 - 45th European Solid-State Device Research Conference, Graz, AustriaIEEE, New York.
Khomyakov Petr A., Luisier Mathieu, Schenk Andreas (2015), Compositional bowing of band energies and their deformation potentials in strained InGaAs ternary alloys: A first-principles study, in
Applied Physics Letters, 107(6), 062104-062104.
Ueda Akiko, Luisier Mathieu, Sano Nobuyuki (2015), Enhanced impurity-limited mobility in ultra-scaled Si nanowire junctionless field-effect transistors, in
Applied Physics Letters, 107(25), 253501-253501.
Smith Lee, Munkang Choi, Frey Martin, Moroz Victor, Ziegler Anne, Luisier Mathieu (2015), FinFET to nanowire transition at 5nm design rules, in
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USAIEEE, New York.
Carrillo-Nunez Hamilton, Luisier Mathieu, Schenk Andreas (2015), InAs-GaSb/Si heterojunction tunnel MOSFETs: An alternative to TFETs as energy-efficient switches?, in
2015 IEEE International Electron Devices Meeting (IEDM), Washington, DCIEEE, New York.
Szabo Aron, Rhyner Reto, Carrillo-Nunez Hamilton, Luisier Mathieu (2015), Phonon-limited performance of single-layer, single-gate black phosphorus n- and p-type field-effect transistors, in
2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, USAIEEE, New York.
Calderara Mauro, Brück Sascha, Pedersen Andreas, Bani-Hashemian Mohammad H., VandeVondele Joost, Luisier Mathieu (2015), Pushing back the limit of ab-initio quantum transport simulations on hybrid supercomputers, in
the International Conference for High Performance Computing, Networking, Storage and Analysis, Austin, TexasACM, New York.
Calderara M., Bruck S., Luisier M. (2015), SplitSolve: A fast solver for wave function based quantum transport simulations on accelerators, in
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USAIEEE, New York.
Pedersen Andreas, Khomyakov Petr A., Luisier Mathieu (2015), Three-Phase Model for the Reversible Lithiation-Delithiation of SnO Anodes in Li-Ion Batteries, in
Physical Review Applied, 4(3), 034005.
The goal of this project is to extend the modeling capabilities of an existing nanoelectronic device simulator called OMEN and use it to investigate electrical and thermal effects in nanostructures driven out-of-equilibrium. The emphasis will be set on incorporating more ab-initio elements into the simulation approach so that any materials or material combinations can be studied and their characteristics rapidly and precisely predicted.