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Tailoring 2d transition metal dichalcogenides for electronic applications

English title Tailoring 2d transition metal dichalcogenides for electronic applications
Applicant Kis Andras
Number 138237
Funding scheme Project funding
Research institution Laboratoire d'électronique et structures à l'échelle nanométrique EPFL - STI - IEL - LANES
Institution of higher education EPF Lausanne - EPFL
Main discipline Condensed Matter Physics
Start/End 01.01.2012 - 31.12.2014
Approved amount 234'948.00
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Keywords (5)

DFT; 2D materials; nanoelectronics; MoS2; electrical properties

Lay Summary (English)

Lead
Lay summary
This proposal aims to open the way to making electronic circuits based on two-dimensional semiconductors, new materials similar to graphene. It has been recently shown that single layers of MoS2 exhibit electrical properties, that make it a candidate for replacing silicon in electronic circuits. In this project, we will aim to further improve its electrical properties and establish theoretical limits of performance. We will investigate which metal makes best electrical contacts to MoS2 and how best to protect it from the environment. Our work will allow widespread research in the basic properties and practical applications of these new promising materials.
Direct link to Lay Summary Last update: 21.02.2013

Responsible applicant and co-applicants

Employees

Name Institute

Publications

Publication
Large-Area Epitaxial Monolayer MoS2
Dumcenco Dumitru, Ovchinnikov Dmitry, Marinov Kolyo, Lazić Predrag, Gibertini Marco, Marzari Nicola, Sanchez Oriol Lopez, Kung Yen-Cheng, Krasnozhon Daria, Chen Ming-Wei, Bertolazzi Simone, Gillet Philippe, Fontcuberta i Morral Anna, Radenovic Aleksandra, Kis Andras (2015), Large-Area Epitaxial Monolayer MoS2, in ACS Nano, 9(4), 4611-4620.
Single-layer MoS2 Electronics
Lembke Dominik, Bertolazzi Simone (2015), Single-layer MoS2 Electronics, in Accounts of chemical research, 48(1), 100-110.
Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?
Cao W., Kang J., Bertolazzi S., Kis A., Banerjee K. (2014), Can 2D-Nanocrystals Extend the Lifetime of Floating-Gate Transistor Based Nonvolatile Memory?, in IEEE Transactions on Electron Devices, 61(10), 3456.
Thermal conductivity of monolayer molybdenum disulfide obtained from temperature-dependent Raman spectroscopy.
Yan Rusen, Simpson Jeffrey R, Bertolazzi Simone, Brivio Jacopo, Watson Michael, Wu Xufei, Kis Andras, Luo Tengfei, Hight Walker Angela R, Xing Huili Grace (2014), Thermal conductivity of monolayer molybdenum disulfide obtained from temperature-dependent Raman spectroscopy., in ACS nano, 8(1), 986-93.
Exciton dynamics in suspended monolayer and few-layer MoS₂ 2D crystals.
Shi Hongyan, Yan Rusen, Bertolazzi Simone, Brivio Jacopo, Gao Bo, Kis Andras, Jena Debdeep, Xing Huili Grace, Huang Libai (2013), Exciton dynamics in suspended monolayer and few-layer MoS₂ 2D crystals., in ACS nano, 7(2), 1072-80.
Nonvolatile memory cells based on MoS2/graphene heterostructures
Bertolazzi Simone, Krasnozhon Daria, Kis Andras (2013), Nonvolatile memory cells based on MoS2/graphene heterostructures, in ACS nano, 7(4), 3246-52.

Collaboration

Group / person Country
Types of collaboration
Takashi Taniguchi/NIMS, Tsukuba Japan (Asia)
- in-depth/constructive exchanges on approaches, methods or results
Gotthard Seifert/TU Dresden Germany (Europe)
- in-depth/constructive exchanges on approaches, methods or results
Reshef Tenne/Weizmann Institute Germany (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Research Infrastructure
- Exchange of personnel
Valeria Nicolosi/Oxford University Great Britain and Northern Ireland (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Exchange of personnel
Christoph Gadermaier/Institute Josef Stefan, Ljubljana Slovenia (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Research Infrastructure
- Exchange of personnel

Scientific events

Active participation

Title Type of contribution Title of article or contribution Date Place Persons involved
ITN Spinograph workshop Talk given at a conference 2D Devices, Circuits and Heterostructures 08.12.2014 Aachen, Germany Kis Andras;
SEMICON Europa Talk given at a conference Single-layer MoS2 - 2D Devices Circuits and Heterostructures 07.10.2014 Grenoble, France Kis Andras;
ICNT Talk given at a conference Single-layer MoS2 - 2D Devices, Circuits and Heterostructures 13.07.2014 Vail, Colorado, United States of America Kis Andras;
Flatlands 2014 Talk given at a conference Single-layer MoS2 - 2D Devices Circuits and Heterostructures 08.07.2014 Dublin, Ireland Kis Andras;
Nano Korea 2014 Talk given at a conference Single-layer MoS2 - 2D Devices and Circuits Beyond Graphene 02.07.2014 Seoul, Korean Republic (South Korea) Kis Andras;
EG2D Epitaxial graphene and 2D materials Talk given at a conference 2D Semiconductors - Devices, Circuits and Heterostructures 16.06.2014 Primosten, Croatia Kis Andras;
Workshop on Dielectrics in Microelectronics Talk given at a conference Single-layer MoS2 at the interface with dielectric materials: transport properties and emerging devices 09.06.2014 Kinsale, Cork, Ireland Bertolazzi Simone;
ICONSAT 2014 Talk given at a conference Single-layer MoS2 – electrical transport, devices and circuits 03.03.2014 Chandigarh, India Kis Andras;
APS March Meeting 2014 Talk given at a conference Effects of the dielectric environment on the electron transport properties of single-layer MoS2 03.03.2014 Colorado, United States of America Bertolazzi Simone;
Trends in nanotechnology Talk given at a conference Single-layer MoS2 – electrical transport, devices and circuits 29.01.2014 Tokyo, Japan Kis Andras;
TFT conference Talk given at a conference Single-layer MoS2 – electrical transport, devices and circuits 23.01.2014 Delft, Netherlands Kis Andras;
MRS Fall meeting Talk given at a conference Single-layer MoS2 – 2D devices and circuits beyond graphene 02.12.2013 Boston, United States of America Kis Andras;
Asian Chemical Congress Talk given at a conference Single-layer MoS2 – 2D devices and circuits beyond graphene 19.08.2013 Singapore, Singapore Kis Andras;
E-MRS Spring meeting Talk given at a conference Single-layer MoS2 - electrical properties, devices and circuits 27.05.2013 Strassbourg, France Kis Andras;
MRS Spring Meeting Talk given at a conference Single-layer MoS2 - electrical properties, devices and circuits 01.04.2013 San Francisco, United States of America Kis Andras;
TRNM conference Talk given at a conference Single-layer MoS2 – electrical transport and devices 12.02.2013 Levi, Finland Kis Andras;
Transition Metal Chalcogenide and Halide Nanostructures 2012 Poster Breaking and stretching of Monolayer MoS2 02.07.2012 Mainz, Germany, Germany Kis Andras; Bertolazzi Simone;


Knowledge transfer events

Active participation

Title Type of contribution Date Place Persons involved
EPFL workshop for gymnasium science teachers Talk 05.11.2014 Lausanne, Switzerland Kis Andras;


Communication with the public

Communication Title Media Place Year
Media relations: print media, online media Fantastic flash memory combines graphene and molybdenite Press release International 2013

Awards

Title Year
Prize for best oral presentation, Single-layer MoS2 at the interface with dielectric materials: transport properties and emerging devices. Oral presentation at Workshop on Dielectrics in Microelectronics (WODIM), Cork, Ireland, June 2014. 2014

Associated projects

Number Title Start Funding scheme
157739 Setup for advanced transport characterisation of nanoelectronic devices 01.12.2014 R'EQUIP
150776 Nano-Frazor 01.01.2014 R'EQUIP
147607 Electronic properties of new atomically thin semiconductors 01.01.2014 Sinergia
157771 Cryofree magnet with variable temperature insert 01.02.2015 R'EQUIP
153298 Optoelectronic devices based on 2D/3D heterojunctions 01.04.2014 Project funding
144985 Setup for high-frequency characterization of nanoelectronic devices 01.12.2012 R'EQUIP
175822 Growth and electronic properties of novel 2D materials with unusual band structure evolution 01.08.2018 Project funding
122044 Electrical response of strained nanoribbons 01.10.2008 Project funding
132102 Electron microscopy of nanolayer devices 01.10.2010 Project funding
162612 Crystalline phases and structural defects in two-dimensional transition metal dichalcogenides 01.02.2016 Project funding
164015 Cryogen-free setup for characterisation of quantum dots based on 2D TMD materials 01.07.2016 R'EQUIP

Abstract

Consumer electronic devices are getting smaller but also hotter as the semiconductor in-dustry rapidly approaches the performance limits of current silicon-based CMOS technology. Short-channel effects and gate leakage increase levels of heat dissipation as transistors are miniaturized. Possible long-term solutions to this problem involve replacing silicon with another material that would perform better at smaller scales. Such a replacement may also enable new functionalities for electronic devices, such as flexible electronics. This proposal aims to open the way to fabricate electronic circuits based on two-dimensional transition metal dichalcogenides (TMDs), newly emerging semiconducting analogues of graphene. It has been recently shown that single layers of MoS2 exhibit electrical properties, notably field-effect transistor characteristics, comparable to thin silicon and that it can be processed on a large-scale using solution-based exfoliation. Preliminary experimental work carried out by one of the applicants indicates that the sub-strate, dielectric environment and contact type play a critical role in achieving high levels of electrical performance. In order to enable rational design of future electronic devices, we propose here to combine experimental work with theoretical studies and find the optimal substrate, dielectric environment and contact geometry for field-effect devices based on single-layer MoS2 and related materials. This will allow widespread research in the basic properties and practical applications of these new promising materials.
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