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Atomic Layer Deposition tool for advanced nano-devices

English title Atomic Layer Deposition tool for advanced nano-devices
Applicant Ionescu Mihai Adrian
Number 128733
Funding scheme R'EQUIP
Research institution Laboratoire des dispositifs nanoélectroniques EPFL - STI - IEL - NANOLAB
Institution of higher education EPF Lausanne - EPFL
Main discipline Microelectronics. Optoelectronics
Start/End 01.12.2009 - 31.07.2011
Approved amount 150'000.00
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Keywords (8)

atomic layer deposition; nanotechnology; nanowires and nanotubes; nansensors and nanoresonators; Nanowires; Nanosensors; Graphene; Optical resonators

Lay Summary (English)

Lead
Lay summary
This equipment proposal deals with an Atomic Layer Deposition (ALD) tool, which will provide thin film growth with the unique capability to coat complex, 3-dimensional objects with precise, conformal layers. In addition, ALD allows atomic-level control over the thickness and composition of the deposit. ALD tool can deposit a wide variety of materials including oxides, nitrides, sulfides and metals.The proposal targets the use of ALD to advanced the research on various types of nanodevices being jointly made by four laboratories of EPFL: (1) Nanolectronic Devices Laboratory (Nanolab - prof. A.M. Ionescu), (2) Microsystem Laboratory (LMIS1 - prof. J. Brugger), Laboratory of Nanoscale Electronics and Structures (LANES - prof. A. Kis) and Laboratory of Photonics and Quantum Measurements (LPQM1 - prof. T. Kippenberg).The four major types of nanodevice fabrication that will be explored based on ALD concern:(i) Nanowire switches - the fabrication of high-k (HfO, Al2O3, ferroelectric dielectrics) / metal gate stacks for nanoelectronic switches on 1D silicon and carbon structures, as for example gate-all-around nanowire transistors, tunnel FET and 3D (vertically) stacked transistors;(ii) 3D nanosensors - ADL deposition through a stencil, stencil coating and ALD blank deposition followed by etching through a stencil serving the fabrication of various 3D structures, with particular emphasis of various types of gas and bio-sensors needing special surface treatments and functionalization;(iii) Graphene nanodevices - ALD for nanoelectronic devices prepared from graphene and single layers of transition metal dichalcogenides needing high-k dielectrics;(iv) Development of microtoroidal on-chip comb generators - The modification of the dispersive behavior of microtoroids by adding uniform layers of dielectrics by ALD as for example Al2O3 or HfO2 on the surface of the fused silica resonator. This work focuses on the generation of optical frequency combs that became a powerful tool in optical physics within the past decade.
Direct link to Lay Summary Last update: 21.02.2013

Responsible applicant and co-applicants

Associated projects

Number Title Start Funding scheme
144985 Setup for high-frequency characterization of nanoelectronic devices 01.12.2012 R'EQUIP
164015 Cryogen-free setup for characterisation of quantum dots based on 2D TMD materials 01.07.2016 R'EQUIP
157739 Setup for advanced transport characterisation of nanoelectronic devices 01.12.2014 R'EQUIP
153298 Optoelectronic devices based on 2D/3D heterojunctions 01.04.2014 Project funding

Abstract

This equipment proposal deals with an Atomic Layer Deposition (ALD) tool, which will provide thin film growth with the unique capability to coat complex, 3-dimensional objects with precise, conformal layers. In addition, ALD allows atomic-level control over the thickness and composition of the deposit. ALD tool can deposit a wide variety of materials including oxides, nitrides, sulfides and metals.The proposal targets the use of ALD to advanced the research on various types of nanodevices being jointly made by four laboratories of EPFL: (1) Nanolectronic Devices Laboratory (Nanolab - prof. A.M. Ionescu), (2) Microsystem Laboratory (LMIS1 - prof. J. Brugger), Laboratory of Nanoscale Electronics and Structures (LANES - prof. A. Kis) and Laboratory of Photonics and Quantum Measurements (LPQM1 - prof. T. Kippenberg).The four major types of nanodevice fabrication that will be explored based on ALD concern:(i) Nanowire switches - the fabrication of high-k (HfO, Al2O3, ferroelectric dielectrics) / metal gate stacks for nanoelectronic switches on 1D silicon and carbon structures, as for example gate-all-around nanowire transistors, tunnel FET and 3D (vertically) stacked transistors;(ii) 3D nanosensors - ADL deposition through a stencil, stencil coating and ALD blank deposition followed by etching through a stencil serving the fabrication of various 3D structures, with particular emphasis of various types of gas and bio-sensors needing special surface treatments and functionalization;(iii) Graphene nanodevices - ALD for nanoelectronic devices prepared from graphene and single layers of transition metal dichalcogenides needing high-k dielectrics;(iv) Development of microtoroidal on-chip comb generators - The modification of the dispersive behavior of microtoroids by adding uniform layers of dielectrics by ALD as for example Al2O3 or HfO2 on the surface of the fused silica resonator. This work focuses on the generation of optical frequency combs that became a powerful tool in optical physics within the past decade (novel technique, awarded with the Nobel Prize for physics in 2005).Some other complementary research exploiting ALD for through silicon vias and RF MEMS devices are planned by other professor colleagues at EPFL, which are not direct part of this proposal.A significant number of SNF projects and European projects, currently running at EPFL, will greatly benefit in terms of device innovation and performance supported by an ALD tool.
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