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Ultra-Fast Perpendicular Spin-Orbit Torque MRAM

Type of publication Peer-reviewed
Publikationsform Original article (peer-reviewed)
Author Cubukcu M., Boulle O., Mikuszeit N., Hamelin C., Bracher T., Lamard N., Cyrille M. C., Buda-Prejbeanu L., Garello K., Miron I. M., Klein O., de Loubens G., Naletov V. V., Langer J., Ocker B., Gambardella P., Gaudin G.,
Project Spin-orbitronics in ferromagnets and antiferromagnets
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Original article (peer-reviewed)

Journal Ieee Transactions on Magnetics
Volume (Issue) 54(4)
Page(s) 9300204 - 9300204
ISBN 0018-9464
Title of proceedings Ieee Transactions on Magnetics
DOI 10.1109/tmag.2017.2772185

Open Access

Type of Open Access Repository (Green Open Access)


We demonstrate ultra-fast (down to 400 ps) bipolar magnetization switching of a three-terminal perpendicular Ta/FeCoB/MgO/FeCoB magnetic tunnel junction. The critical current density rises significantly as the current pulse shortens below 10 ns, which translates into a minimum in the write energy in the nanosecond range. Our results show that spin-orbit torque-MRAM allows for fast and low-power write operations, which makes it promising for non-volatile cache memory applications.