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Current-induced switching of YIG/Pt bilayers with in-plane magnetization due to Oersted fields

Type of publication Peer-reviewed
Publikationsform Original article (peer-reviewed)
Author Mendil J., Trassin M., Bu Q. Q., Fiebig M., Gambardella P.,
Project Spin-orbitronics in ferromagnets and antiferromagnets
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Original article (peer-reviewed)

Journal Applied Physics Letters
Volume (Issue) 114(17)
Page(s) 172404 - 172404
ISBN 0003-6951
Title of proceedings Applied Physics Letters
DOI 10.1063/1.5090205

Open Access

URL https://arxiv.org/abs/1904.10517
Type of Open Access Repository (Green Open Access)

Abstract

We report on the switching of the in-plane magnetization of thin yttrium iron garnet (YIG)/Pt bilayers induced by an electrical current. The switching is either field-induced and assisted by a dc current, or current-induced and assisted by a static magnetic field. The reversal of magnetization occurs at a current density as low as 10(5) A/cm(2) and magnetic fields of similar to 40 mu T, two orders of magnitude smaller than in ferromagnetic metals, and consistent with the weak uniaxial anisotropy of the YIG layers. We use the transverse component of the spin Hall magnetoresistance to sense the magnetic orientation of YIG while sweeping the current. Our measurements and simulations reveal that the current-induced effective field responsible for switching is due to the Oersted field generated by the current flowing in the Pt layer rather than by spin-orbit torques, and that the switching efficiency is influenced by pinning of the magnetic domains. Published under license by AIP Publishing.
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