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Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

Type of publication Peer-reviewed
Publikationsform Original article (peer-reviewed)
Author Olejnik K., Schuler V., Marti X., Novak V., Kaspar Z., Wadley P., Campion R. P., Edmonds K. W., Gallagher B. L., Garces J., Baumgartner M., Gambardella P., Jungwirth T.,
Project Spin-orbitronics in ferromagnets and antiferromagnets
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Original article (peer-reviewed)

Journal Nature Communications
Volume (Issue) 8
Page(s) 15434 - 15434
ISBN 2041-1723
Title of proceedings Nature Communications
DOI 10.1038/ncomms15434

Open Access

Type of Open Access Repository (Green Open Access)


Antiferromagnets offer a unique combination of properties including the radiation and magnetic field hardness, the absence of stray magnetic fields, and the spin-dynamics frequency scale in terahertz. Recent experiments have demonstrated that relativistic spin-orbit torques can provide the means for an efficient electric control of antiferromagnetic moments. Here we show that elementary-shape memory cells fabricated from a single-layer antiferromagnet CuMnAs deposited on a III-V or Si substrate have deterministic multi-level switching characteristics. They allow for counting and recording thousands of input pulses and responding to pulses of lengths downscaled to hundreds of picoseconds. To demonstrate the compatibility with common microelectronic circuitry, we implemented the antiferromagnetic bit cell in a standard printed circuit board managed and powered at ambient conditions by a computer via a USB interface. Our results open a path towards specialized embedded memory-logic applications and ultra-fast components based on antiferromagnets.