Strained semiconductors; direct bandgap Ge; Moore's law; synchrotron-x-ray
Armand Pilon F. T., Lyasota A., Niquet Y.-M., Reboud V., Calvo V., Pauc N., Widiez J., Bonzon C., Hartmann J. M., Chelnokov A., Faist J., Sigg H. (2019), Lasing in strained germanium microbridges, in
Nature Communications, 10(1), 2724-2724.
Chrétien Jérémie, Pauc Nicolas, Armand Pilon Francesco, Bertrand Mathieu, Thai Quang-Minh, Casiez Lara, Bernier Nicolas, Dansas Hugo, Gergaud Patrice, Delamadeleine Eric, Khazaka Rami, Sigg Hans, Faist Jerome, Chelnokov Alexei, Reboud Vincent, Hartmann Jean-Michel, Calvo Vincent (2019), GeSn Lasers Covering a Wide Wavelength Range Thanks to Uniaxial Tensile Strain, in
ACS Photonics, 6(10), 2462-2469.
von den Driesch Nils, Stange Daniela, Rainko Denis, Breuer Uwe, Capellini Giovanni, Hartmann Jean-Michel, Sigg Hans, Mantl Siegfried, Grützmacher Detlev, Buca Dan (2019), Epitaxy of Si-Ge-Sn-based heterostructures for CMOS-integratable light emitters, in
Solid-State Electronics, 155, 139-143.
Stange Daniela, von den Driesch Nils, Zabel Thomas, Armand-Pilon Francesco, Rainko Denis, Marzban Bahareh, Zaumseil Peter, Hartmann Jean-Michel, Ikonic Zoran, Capellini Giovanni, Mantl Siegfried, Sigg Hans, Witzens Jeremy, Grützmacher Detlev, Buca Dan (2018), GeSn/SiGeSn Heterostructure and Multi Quantum Well Lasers, in
ACS Photonics, 5(11), 4628-4636.
von den Driesch Nils, Stange Daniela, Rainko Denis, Povstugar Ivan, Breuer Uwe, Ikonic Zoran, Hartmann Jean-Michel, Schubert Markus Andreas, Capellini Giovanni, Sigg Hans, Mantl Siegfried, Grützmacher Detlev, Buca Dan (2018), (Invited) Epitaxy of Direct Bandgap Group IV Si-Ge-Sn Alloys towards Heterostructure Light Emitters, in
ECS Transactions, 86(7), 189-197.
von den Driesch Nils, Stange Daniela, Rainko Denis, Povstugar Ivan, Zaumseil Peter, Capellini Giovanni, Schröder Thomas, Denneulin Thibaud, Ikonic Zoran, Hartmann Jean-Michel, Sigg Hans, Mantl Siegfried, Grützmacher Detlev, Buca Dan (2018), Advanced GeSn/SiGeSn Group IV Heterostructure Lasers, in
Advanced Science, 5(6), 1700955-1700955.
Reboud V., Gassenq A., Pauc N., Aubin J., Milord L., Thai Q. M., Bertrand M., Guilloy K., Rouchon D., Rothman J., Zabel T., Armand Pilon F., Sigg H., Chelnokov A., Hartmann J. M., Calvo V. (2017), Optically pumped GeSn micro-disks with 16% Sn lasing at 3.1 μ m up to 180 K, in
Applied Physics Letters, 111(9), 092101-092101.
Zabel Thomas, Geiger Richard, Marin Esteban, Müller Elisabeth, Diaz Ana, Bonzon Christopher, Süess Martin J., Spolenak Ralph, Faist Jérôme, Sigg Hans (2017), Top-down method to introduce ultra-high elastic strain, in
Journal of Materials Research, 32(4), 726-736.
Stange Daniela, Wirths Stephan, Geiger Richard, Schulte-Braucks Christian, Marzban Bahareh, von den Driesch Nils, Mussler Gregor, Zabel Thomas, Stoica Toma, Hartmann Jean-Michel, Mantl Siegfried, Ikonic Zoran, Grützmacher Detlev, Sigg Hans, Witzens Jeremy, Buca Dan (2016), Optically Pumped GeSn Microdisk Lasers on Si, in
ACS Photonics, 3(7), 1279-1285.
Based upon our previous demonstration of ultra high strain in Si and Ge, a following-up research program is proposed to look into several fundamental material parameters of strained semiconductors. In particular, this study is aiming to complete the understanding of the lasing of Ge based direct bandgap systems and will explore the non-linear optical properties of Si which normally is excluded by symmetry.We here propose to investigate strain induced modification of the mechanical, electrical and optical properties of most relevant semiconductors such as Si, Ge and (In)GaAs. We aim to deliver the knowledge base for concepts to increase the performance of current devices.An essential part of the investigation make us of synchrotron based spectroscopy including ARPES (angle resolved photo-electron spectroscopy), photo-electron spectroscopy (PEEM) and diffraction but also uses dedicated laboratory based optical spectroscopy.