SiC Power electronic device; SiC; Solid State Transformer; SiC MOSFET; SiC Schottky diode; Smart grid
Nida Selamnesh, Tsibizov Alexander, Ziemann Thomas, Woerle Judith, Moesch Andy, Schulze-Briese Clemens, Pradervand Claude, Tudisco Salvatore, Sigg Hans, Bunk Oliver, Grossner Ulrike, Camarda Massimo (2019), Silicon carbide X-ray beam position monitors for synchrotron applications., in Journal of synchrotron radiation
, 26(Pt 1), 28-35.
Woerle Judith, Simonka Vito, Elisabeth Müller, Sigg Hans, Selberherr Siegfried, Weinbub Josef, Camarda Massino, Grossner Ulrike (2019), Surface Morphology of 4H-SiC After Thermal Oxidation, Materials Science Forum, in Proceedings of 17th European Conference on Silicon Carbide and Related Materials, Birmingham, United
, Birmingham, UKTrans Tech Publications Ltd, United Kingdom.
Tudisco Salvatore, La Via Francesco, Agodi Clementina, Altana Carmen, Borghi Giacomo, Boscardin Maurizio, Bussolino Giancarlo, Calcagno Lucia, Camarda Massimo, Cappuzzello Francesco, Carbone Diana, Cascino Salvatore, Casini Giovanni, Cavallaro Manuela, Ciampi Caterina, Cirrone Giuseppe, Cuttone Giacomo, Fazzi Alberto, Giove Dario, Gorini Giuseppe, Labate Luca, Lanzalone Gaetano, Litrico Grazia, Longo Giuseppe, et al. (2018), SiCILIA—Silicon Carbide Detectors for Intense Luminosity Investigations and Applications, in Sensors
, 18(7), 2289-2289.
Camarda Massimo, Woerle Judith, Soulière Véronique, Ferro Gabriel, Sigg Hans, Grossner Ulrike, Gobrecht Jens (2017), Analysis of 4H-SiC MOS Capacitors on Macro-Stepped Surfaces, in Materials Science Forum
, 897, 107-110.
Woerle Judith, Camarda Massimo, Schneider Christof W., Sigg Hans, Grossner Ulrike, Gobrecht Jens (2017), Analysis of Thin Thermal Oxides on (0001) SiC Epitaxial Layers, in Materials Science Forum
, 897, 119-122.
Woerle J., Bisti F., Husanu M.-A., Strocov V. N., Schneider C. W., Sigg H., Gobrecht J., Grossner U., Camarda M. (2017), Electronic band structure of the buried SiO 2 /SiC interface investigated by soft x-ray ARPES, in Applied Physics Letters
, 110(13), 132101-132101.
Privitera Stefania M. S., Litrico Grazia, Camarda Massimo, Piluso Nicolò, La Via Francesco (2017), Electrical properties of extended defects in 4H-SiC investigated by photoinduced current measurements, in Applied Physics Express
, 10(3), 036601-036601.
Soulière Véronique, Carole Davy, Camarda Massimo, Woerle Judith, Grossner Ulrike, Dezellus Olivier, Ferro Gabriel (2016), 4H-SiC(0001) Surface Faceting during Interaction with Liquid Si, in Materials Science Forum
, 858, 163-166.
This project aims for developing new concepts of design and fabrication processes for SiC power semiconductors for use in a Solid State Tranformer (SST) demonstrator for medium voltage power distribution. SSTs could be the most efficient key component in the future "smart grids" which are considered necessary for an effective integration of large amounts of electricity from renewable sources (solar, wind) which are characterized by quickly fluctuating output and a decentralized nature. SSTs will increase efficiency in electricity distribution and enable the efficient integration of renewable sources at the same time, thus meeting several demands of the "Energy Strategy 2050". A SST for smart grids cannot be realized with sufficient efficiency using existing Si power semiconductors. SiC in combination with adapted device designs in principle can meet the necessary specifications. However, some of the fabrication processes are still immature and their effects on the material are scientifically only partly understood. Thus, the theoretical potential of SiC for power electronics by far cannot be fully exploted today. It is the key target of this project to clarify the processing effects on SiC material through using advanced proceesses and unique analytic technologies on the atomic scale, e.g. synchrotron based techniques. Apart from use in SSTs, better SiC devices can enhance electric motor drive and traction system efficiency compared to those using Si devices.This proposal is "project 1" of the joint umbrella project "SwiSS Transformer - Solid State SiC Transformer". It will deliver an analyzes of the performance of SiC based transformers and converters including a SST demonstrator in P3 and packaging-cooling investigation in P3 and finally in P4 the socialecomical, sustainability and reliability impact. The SiC power semiconductors therefore are the start of a coordinated value chain.