Project

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Advanced heterostructures based on III-V nanostructures for photonics on silicon

English title Advanced heterostructures based on III-V nanostructures for photonics on silicon
Applicant Fontcuberta i Morral Anna
Number 163861
Funding scheme Bilateral programmes
Research institution Laboratoire des matériaux semiconducteurs EPFL - STI - IMX - LMSC
Institution of higher education EPF Lausanne - EPFL
Main discipline Material Sciences
Start/End 01.02.2016 - 31.05.2019
Approved amount 250'000.00
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All Disciplines (2)

Discipline
Material Sciences
Condensed Matter Physics

Keywords (9)

nanowire; cathodoluminescence; epitaxy; photonics; nanoscale membrane; quantum heterostructures; heterogeneous integration; semiconductors; III-Vs

Lay Summary (French)

Lead
L'objectif de ce projet est d'integrer des nanostructures en sémiconducteurs III-V, connus pour leur bonne fonctionalité en optoélectronique, avec la technologie silicium qui lidère le marché electronique.
Lay summary
L'objectif de ce projet est d'integrer des structures en sémiconducteurs III-V, connus pour leur bonne fonctionalité en optoélectronique, avec la technologie silicium. Pour ce faire, nous allons investiguer comment fabriquer des nanostructures de haute qualité. La petite taille des nanostructures permet de relacher les contraintes méchaniques entre les deux matériaux mais aussi d'améliorer l'extraction de lumière des dispositifs optoélectroniques. Nous allons étudier une grande gamme de matériaux III-V afin d'adresser des possibles applications optiques de l'infrarouge à l'ultraviolet. Le projet emenera des réponses fondamentales concernant le design optimal du point de vue electronique et photonique, comment les faire croitre en haute qualité sur silicium. Le projet concerne des parties experimentales et théoriques qui seront menées en étroite collaboration entre le partenaires Russe et Suisse.
Direct link to Lay Summary Last update: 15.12.2015

Responsible applicant and co-applicants

Employees

Name Institute

Publications

Publication
Bistability of Contact Angle and Its Role in Achieving Quantum-Thin Self-Assisted GaAs nanowires
Kim Wonjong (2018), Bistability of Contact Angle and Its Role in Achieving Quantum-Thin Self-Assisted GaAs nanowires, in Nano Letters, 18, 49.
Engineering the Size Distributions of Ordered GaAs Nanowires on Silicon
Vukajlovic-Plestina Jelena (2017), Engineering the Size Distributions of Ordered GaAs Nanowires on Silicon, in Nano Letters, 17, 4101.
Revealing Large-Scale Homogeneity and Trace Impurity Sensitivity of GaAs Nanoscale Membranes
Yang Z (2017), Revealing Large-Scale Homogeneity and Trace Impurity Sensitivity of GaAs Nanoscale Membranes, in Nano Letters, 17, 2979.
Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si
J. Vukajlovic-Plestina (2016), Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si, in Nanotechnology, 27, 455601.

Collaboration

Group / person Country
Types of collaboration
Prof. D. Zumbühl/U. Basel Switzerland (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
Prof. Jordi Arbiol Spain (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
- Research Infrastructure
- Exchange of personnel
Prof. Vladimir Dubrovskii Russia (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
- Research Infrastructure
- Exchange of personnel
Prof. Lincoln Lauhon, Northwestern U (USA) United States of America (North America)
- in-depth/constructive exchanges on approaches, methods or results
- Publication

Scientific events

Active participation

Title Type of contribution Title of article or contribution Date Place Persons involved
20th International Winterschool on New Developments in Solid State Physics Talk given at a conference Semiconductor nanowires for applications in future technologies? 25.02.2018 Mauterndorf, Austria Friedl Martin; Dubrovskii Vladimir G; Fontcuberta i Morral Anna;
QSIT general meeting Talk given at a conference InGaAs quantum wires and crosses 07.02.2018 Arosa, Switzerland Fontcuberta i Morral Anna; Friedl Martin;
Semiconnano 2017: 6th International Workshop Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures Talk given at a conference integration of III-Vs on silicon by nanostructures 27.09.2017 Como, Italy Fontcuberta i Morral Anna; Friedl Martin;
IUMRS-ICAM 2017 Poster Horizontally-Oriented InAs Nanowires Grown by MBE on GaAs 27.08.2017 Kyoto, Japan Friedl Martin; Dubrovskii Vladimir G;
Nanowires Poster Laterally oriented InAs nanowires on GaAs substrates 29.05.2017 Lund, Sweden Dubrovskii Vladimir G; Fontcuberta i Morral Anna; Friedl Martin;
International summer school “Nanostructures for Photonics NSP-2016” Talk given at a conference Growth of organized III-V nano structures for quantum technology and energy applications 27.06.2016 St Petersburg, Russia Dubrovskii Vladimir G; Friedl Martin; Fontcuberta i Morral Anna;


Associated projects

Number Title Start Funding scheme
170759 HF Vapor Etcher for Stiction Free Release of Suspended Micro- and Nanostructures 01.12.2016 R'EQUIP
144954 Cryogen-free scanning confocal microscopy for direct-correlation between structure and function. 01.05.2013 R'EQUIP
156081 Direct doping of self-catalyzed III-V nanowires 01.01.2015 Project funding (Div. I-III)

Abstract

The objective of this project is to integrate III-V semiconductor nanostructures on the silicon platform. By integrating these two classes of materials, it is possible to combine optimal photonic and electronic functionalities. By growing different III-V semiconductors, we propose to cover a large part of the optoelectronic spectrum from the UV to the infrared. The project will provide fundamental answers around the following aspects: the optimal design of the nanostructures from both the electronic and photonic point of view, synthesis and the investigation of the growth mechanisms on silicon as well as the optical properties. The project is composed of both experimental and theoretical parts conducted in close collaboration by the Russian and Swiss groups. In particular we want to answer the following questions:•What are the initial stages of growth of III-V nanostructures on silicon and how is it possible to influence them for the obtaining of high quality structures? •What are the growth mechanisms that control the length, diameter and surface density of GaN nanowires obtained by different techniques (MBE, MOCVD, HVPE) on Si and sapphire substrates?•What are the strain relaxation mechanisms in the growth of mismatched structures on nanoscale nanowires and membranes? •What are the design rules for the defect-free growth of lattice mismatch structures on nanoscale membranes and how do they compare to the mechanisms in nanowires? •What are the design rules for an efficient light out-coupling in GaN nanowires and InGaN/AlGaN core-shell nanowire heterostructures on silicon and sapphire and in GaAs nanoscale membranes on silicon? Under what conditions is it possible to translate the growth of GaAs nanoscale membranes on GaAs to silicon substrates?•What are the optical properties of the quantum heterostructures obtained on nanoscale membranes and nanowires? Are they homogeneous at the nanoscale?Through this project we aim at providing a fundamental understanding on the possibilities that nanoscale membranes give as templates for the growth of more sophisticated quantum structures. We expect our results will be of general interest for a broad regime of applications and offer new horizons in the integration of III-V nanostructures for photonic applications.
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