nanowire; cathodoluminescence; epitaxy; photonics; nanoscale membrane; quantum heterostructures; heterogeneous integration; semiconductors; III-Vs
Vukajlovic-Plestina J., Kim W., Ghisalberti L., Varnavides G., Tütüncuoglu G., Potts H., Friedl M., Güniat L., Carter W. C., Dubrovskii V. G., Fontcuberta i Morral A. (2019), Fundamental aspects to localize self-catalyzed III-V nanowires on silicon, in Nature Communications
, 10(1), 869-869.
Jürgensen C, Mikulik D, Kim W, Ghisalberti L, Bernard G, Friedl M, Carter W Craig, Fontcuberta i Morral A, Romero-Gomez P (2019), Growth of nanowire arrays from micron-feature templates, in Nanotechnology
, 30(28), 285302-285302.
Güniat Lucas, Martí-Sánchez Sara, Garcia Oscar, Boscardin Mégane, Vindice David, Tappy Nicolas, Friedl Martin, Kim Wonjong, Zamani Mahdi, Francaviglia Luca, Balgarkashi Akshay, Leran Jean-Baptiste, Arbiol Jordi, Fontcuberta i Morral Anna (2019), III–V Integration on Si(100): Vertical Nanospades, in ACS Nano
, 13(5), 5833-5840.
Stutz Elias Z., Friedl Martin, Burgess Tim, Tan Hark Hoe, Caroff Philippe, Jagadish Chennupati, Fontcuberta i Morral Anna (2019), Nanosails Showcasing Zn 3 As 2 as an Optoelectronic‐Grade Earth Abundant Semiconductor, in physica status solidi (RRL) – Rapid Research Letters
, 13(7), 1900084-1900084.
Dorodnyy Alexander, Salamin Yannick, Ma Ping, Vukajlovic Plestina Jelena, Lassaline Nolan, Mikulik Dmitry, Romero-Gomez Pablo, Fontcuberta i Morral Anna, Leuthold Juerg (2018), Plasmonic Photodetectors, in IEEE Journal of Selected Topics in Quantum Electronics
, 24(6), 1-13.
Francaviglia Luca, Giunto Andrea, Kim Wonjong, Romero-Gomez Pablo, Vukajlovic-Plestina Jelena, Friedl Martin, Potts Heidi, Güniat Lucas, Tütüncüoglu Gözde, Fontcuberta i Morral Anna (2018), Anisotropic-Strain-Induced Band Gap Engineering in Nanowire-Based Quantum Dots, in Nano Letters
, 18(4), 2393-2401.
Friedl Martin, Cerveny Kris, Weigele Pirmin, Tütüncüoglu Gozde, Martí-Sánchez Sara, Huang Chunyi, Patlatiuk Taras, Potts Heidi, Sun Zhiyuan, Hill Megan O., Güniat Lucas, Kim Wonjong, Zamani Mahdi, Dubrovskii Vladimir G., Arbiol Jordi, Lauhon Lincoln J., Zumbühl Dominik M., Fontcuberta i Morral Anna (2018), Template-Assisted Scalable Nanowire Networks, in Nano Letters
, 18(4), 2666-2671.
Kim Wonjong, Dubrovskii Vladimir G., Vukajlovic-Plestina Jelena, Tütüncüoglu Gözde, Francaviglia Luca, Güniat Lucas, Potts Heidi, Friedl Martin, Leran Jean-Baptiste, Fontcuberta i Morral Anna (2017), Bistability of Contact Angle and Its Role in Achieving Quantum-Thin Self-Assisted GaAs nanowires, in Nano Letters
, 18(1), 49-57.
Vukajlovic-Plestina Jelena, Kim Wonjong, Dubrovski Vladimir G., Tütüncüoğlu Gözde, Lagier Maxime, Potts Heidi, Friedl Martin, Fontcuberta i Morral Anna (2017), Engineering the Size Distributions of Ordered GaAs Nanowires on Silicon, in Nano Letters
, 17(7), 4101-4108.
Yang Z., Surrente A., Tutuncuoglu G., Galkowski K., Cazaban-Carrazé M., Amaduzzi F., Leroux P., Maude D. K., Fontcuberta i Morral A., Plochocka P. (2017), Revealing Large-Scale Homogeneity and Trace Impurity Sensitivity of GaAs Nanoscale Membranes, in Nano Letters
, 17(5), 2979-2984.
Vukajlovic-Plestina Jelena, Dubrovskii Vladimir G, Tütüncuoǧlu Gözde, Potts Heidi, Ricca Ruben, Meyer Frank, Matteini Federico, Leran Jean-Baptiste, i Morral Anna Fontcuberta (2016), Molecular beam epitaxy of InAs nanowires in SiO 2 nanotube templates: challenges and prospects for integration of III–Vs on Si, in Nanotechnology
, 27(45), 455601-455601.
J. Vukajlovic-Plestina (2016), Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si, in Nanotechnology
, 27, 455601.
The objective of this project is to integrate III-V semiconductor nanostructures on the silicon platform. By integrating these two classes of materials, it is possible to combine optimal photonic and electronic functionalities. By growing different III-V semiconductors, we propose to cover a large part of the optoelectronic spectrum from the UV to the infrared. The project will provide fundamental answers around the following aspects: the optimal design of the nanostructures from both the electronic and photonic point of view, synthesis and the investigation of the growth mechanisms on silicon as well as the optical properties. The project is composed of both experimental and theoretical parts conducted in close collaboration by the Russian and Swiss groups. In particular we want to answer the following questions:•What are the initial stages of growth of III-V nanostructures on silicon and how is it possible to influence them for the obtaining of high quality structures? •What are the growth mechanisms that control the length, diameter and surface density of GaN nanowires obtained by different techniques (MBE, MOCVD, HVPE) on Si and sapphire substrates?•What are the strain relaxation mechanisms in the growth of mismatched structures on nanoscale nanowires and membranes? •What are the design rules for the defect-free growth of lattice mismatch structures on nanoscale membranes and how do they compare to the mechanisms in nanowires? •What are the design rules for an efficient light out-coupling in GaN nanowires and InGaN/AlGaN core-shell nanowire heterostructures on silicon and sapphire and in GaAs nanoscale membranes on silicon? Under what conditions is it possible to translate the growth of GaAs nanoscale membranes on GaAs to silicon substrates?•What are the optical properties of the quantum heterostructures obtained on nanoscale membranes and nanowires? Are they homogeneous at the nanoscale?Through this project we aim at providing a fundamental understanding on the possibilities that nanoscale membranes give as templates for the growth of more sophisticated quantum structures. We expect our results will be of general interest for a broad regime of applications and offer new horizons in the integration of III-V nanostructures for photonic applications.