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Physics-based Modeling of Electronic Devices at the Nanometer Scale

English title Physics-based Modeling of Electronic Devices at the Nanometer Scale
Applicant Luisier Mathieu
Number 159314
Funding scheme SNSF Professorships
Research institution Institut für Integrierte Systeme ETH Zürich
Institution of higher education ETH Zurich - ETHZ
Main discipline Microelectronics. Optoelectronics
Start/End 01.08.2015 - 31.07.2017
Approved amount 640'365.00
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All Disciplines (2)

Discipline
Microelectronics. Optoelectronics
Electrical Engineering

Keywords (4)

atomistic simulation; computer aided design; device modeling; nanoelectronics

Lay Summary (French)

Lead
La taille des circuits intégrés présents dans nos téléphones cellulaires, ordinateurs portables et autres appareils électroniques n'a cessé de décroître depuis maintenant plus de 40 ans si bien que la partie active des transistors, les éléments centraux de chaque microprocesseur, ne contient plus que quelques centaines d'atomes. A cette échelle, il devient difficile de prédire quel sera le comportement d'un dispositif en se fondant uniquement sur son intuition ou sur des résultats expérimentaux antérieurs car de nombreux effets quantiques font leur apparition. Ceux-ci sont plus difficiles à maîtriser que les effets classiques. Pour limiter l'approche par essais et erreurs souvent pratiquée en laboratoire, une modélisation numérique des transistors apparaît comme une des solutions les plus appropriée, pour autant que toute la physique nécessaire soit incluse.
Lay summary

L'objectif principal de ce projet est de développer des techniques de simulation pouvant être appliquées à des dispositifs dont la taille n'excède pas quelques nanomètres. En particulier, l'accent est mis sur l'auto-échauffement des transistors qui est causé par la transformation de l'énergie dégagée par les électrons en chaleur. Pour ce faire, il est important d'avoir des modèles qui fonctionnent sans paramètres externes et appelés modèles ab-initio. Ceci permet d'étudier n'importe quel système atomique ou combinaison de plusieurs matériaux sans d'abord passer par une étape de paramétrisation. Parallèlement à cette activité, il est prévu d'examiner les interactions entre les électrons de manière à déterminer leur influence sur la performance de transistors atteignant les plus petites dimensions possibles. En résumé, une meilleure compréhension des dispositifs électroniques miniatures est attendue de ce projet grâce à des simulations ultra-sophistiquées qui accompagneront le travail expérimental dans un avenir très proche.

Direct link to Lay Summary Last update: 01.04.2015

Responsible applicant and co-applicants

Employees

Publications

Publication
Electronic properties of lithiated SnO-based anode materials
Bauer Dominik, Bunjaku Teutë, Pedersen Andreas, Luisier Mathieu (2017), Electronic properties of lithiated SnO-based anode materials, in Journal of Applied Physics, 122(5), 055105-055105.
Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials
Stieger Christian, Szabo Aron, Bunjaku Teutë, Luisier Mathieu (2017), Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials, in Journal of Applied Physics, 122(4), 045708-045708.
Charge Trapping Mechanism Leading to Sub-60-mV/decade-Swing FETs
Daus Alwin, Vogt Christian, Munzenrieder Niko, Petti Luisa, Knobelspies Stefan, Cantarella Giuseppe, Luisier Mathieu, Salvatore Giovanni A., Troster Gerhard (2017), Charge Trapping Mechanism Leading to Sub-60-mV/decade-Swing FETs, in IEEE Transactions on Electron Devices, 64(7), 2789-2796.
Ab-initio modeling of self-heating in single-layer MoS 2 transistors
Stieger Christian, Szabo Aron, Bunjaku Teute, Luisier Mathieu (2017), Ab-initio modeling of self-heating in single-layer MoS 2 transistors, in 2017 75th Device Research Conference (DRC), South Bend, IN, USAIEEE, New York.
Quantum treatment of phonon scattering for modeling of three-dimensional atomistic transport
Lee Y., Bescond M., Cavassilas N., Logoteta D., Raymond L., Lannoo M., Luisier M. (2017), Quantum treatment of phonon scattering for modeling of three-dimensional atomistic transport, in Physical Review B, 95(20), 201412-201412.
Lithiation of Silicon Nanoclusters
Pedersen Andreas, Bieri Michael, Luisier Mathieu, Pizzagalli Laurent (2017), Lithiation of Silicon Nanoclusters, in Physical Review Applied, 7(5), 054012-054012.
Band-to-Band Tunneling in SiGe: Influence of Alloy Scattering
Jin Seonghoon, Park Hong-Hyun, Luisier Mathieu, Choi Woosung, Kim Jongchol, Lee Keun-Ho (2017), Band-to-Band Tunneling in SiGe: Influence of Alloy Scattering, in IEEE Electron Device Letters, 38(4), 422-425.
Influence of thermal losses at the gate contact of Si nanowire transistors: A phenomenological treatment in quantum transport theory
Rhyner Reto, Luisier Mathieu (2017), Influence of thermal losses at the gate contact of Si nanowire transistors: A phenomenological treatment in quantum transport theory, in Applied Physics Letters, 110(10), 103508-103508.
Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects
Gooth Johannes, Borg Mattias, Schmid Heinz, Schaller Vanessa, Wirths Stephan, Moselund Kirsten, Luisier Mathieu, Karg Siegfried, Riel Heike (2017), Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects, in Nano Letters, 17(4), 2596-2602.
On the electrostatic control achieved in transistors based on multilayered MoS 2 : A first-principles study
Lu Anh Khoa Augustin, Pourtois Geoffrey, Luisier Mathieu, Radu Iuliana P., Houssa Michel (2017), On the electrostatic control achieved in transistors based on multilayered MoS 2 : A first-principles study, in Journal of Applied Physics, 121(4), 044505-044505.
Length Scale of Diffusive Phonon Transport in Suspended Thin Silicon Nanowires
N. Raja Shyamprasad, Rhyner Reto, Vuttivorakulchai Kantawong, Luisier Mathieu, Poulikakos Dimos (2017), Length Scale of Diffusive Phonon Transport in Suspended Thin Silicon Nanowires, in Nano Letters, 17(1), 276-283.
Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators
Daus Alwin, Vogt Christian, Münzenrieder Niko, Petti Luisa, Knobelspies Stefan, Cantarella Giuseppe, Luisier Mathieu, Salvatore Giovanni A., Tröster Gerhard (2016), Positive charge trapping phenomenon in n-channel thin-film transistors with amorphous alumina gate insulators, in Journal of Applied Physics, 120(24), 244501-244501.
First-principles simulations of 2-D semiconductor devices: Mobility, I-V characteristics, and contact resistance
Luisier M., Szabo A., Stieger C., Klinkert C., Bruck S., Jain A., Novotny L. (2016), First-principles simulations of 2-D semiconductor devices: Mobility, I-V characteristics, and contact resistance, in 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USAIEEE, New York.
Performance predictions of single-layer In-V double-gate n- and p-type field-effect transistors
Carrillo-Nunez Hamilton, Stieger Christian, Luisier Mathieu, Schenk Andreas (2016), Performance predictions of single-layer In-V double-gate n- and p-type field-effect transistors, in 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USAIEEE, New York.
Performance projection of III-V ultra-thin-body, FinFET, and nanowire MOSFETs for two next-generation technology nodes
Rau M., Caruso E., Lizzit D., Palestri P., Esseni D., Schenk A., Selmi L., Luisier M. (2016), Performance projection of III-V ultra-thin-body, FinFET, and nanowire MOSFETs for two next-generation technology nodes, in 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USAIEEE, New York.
Atomistic simulation of nanodevices
Luisier Mathieu, Rhyner Reto, Szabo Aron, Pedersen Andreas (2016), Atomistic simulation of nanodevices, in 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, GermanyIEEE, New York.
Drift-diffusion quantum corrections for In 0.53 Ga 0.47 As double gate ultra-thin-body FETs
Aguirre P., Carrillo-Nunez H., Ziegler A., Luisier M., Schenk A. (2016), Drift-diffusion quantum corrections for In 0.53 Ga 0.47 As double gate ultra-thin-body FETs, in 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, GermanyIEEE, New York.
Effect of surface roughness and phonon scattering on extremely narrow InAs-Si Nanowire TFETs
Carrillo-Nunez Hamilton, Rhyner Reto, Luisier Mathieu, Schenk Andreas (2016), Effect of surface roughness and phonon scattering on extremely narrow InAs-Si Nanowire TFETs, in ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne, SwitzerlandIEEE, New York.
Modeling the thermal conductivity of Si nanowires with surface roughness
Vuttivorakulchai Kantawong, Luisier Mathieu, Schenk Andreas (2016), Modeling the thermal conductivity of Si nanowires with surface roughness, in 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, GermanyIEEE, New York.
Performance study of strained III–V materials for ultra-thin body transistor applications
Rau Martin, Markussen Troels, Caruso Enrico, Esseni David, Gnani Elena, Gnudi Antonio, Khomyakov Petr A., Luisier Mathieu, Osgnach Patrik, Palestri Pierpaolo, Reggiani Susanna, Schenk Andreas, Selmi Luca, Stokbro Kurt (2016), Performance study of strained III–V materials for ultra-thin body transistor applications, in ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne, SwitzerlandIEEE, New York.
Physical modeling of ferroelectric field-effect transistors in the negative capacitance regime
Lenarczyk P., Luisier M. (2016), Physical modeling of ferroelectric field-effect transistors in the negative capacitance regime, in 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, GermanyIEEE, New York.
Transfer matrix based semiclassical model for field-induced and geometrical quantum confinement in tunnel FETs
Sant Saurabh, Carrillo-Nunez Hamilton, Luisier Mathieu, Schenk Andreas (2016), Transfer matrix based semiclassical model for field-induced and geometrical quantum confinement in tunnel FETs, in 2016 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Nuremberg, GermanyIEEE, New York.
A generalized Poisson solver for first-principles device simulations
Bani-Hashemian Mohammad Hossein, Brück Sascha, Luisier Mathieu, VandeVondele Joost (2016), A generalized Poisson solver for first-principles device simulations, in The Journal of Chemical Physics, 144(4), 044113-044113.
A Nonparabolic Bandstructure Model for Computationally Efficient Quantum Transport Simulations
Ziegler Anne, Frey Martin, Smith Lee, Luisier Mathieu (2016), A Nonparabolic Bandstructure Model for Computationally Efficient Quantum Transport Simulations, in IEEE Transactions on Electron Devices, 63(5), 2050-2056.
Atomic Scale Plasmonic Switch
Emboras Alexandros, Niegemann Jens, Ma Ping, Haffner Christian, Pedersen Andreas, Luisier Mathieu, Hafner Christian, Schimmel Thomas, Leuthold Juerg (2016), Atomic Scale Plasmonic Switch, in Nano Letters, 16(1), 709-714.
Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells
Zerveas George, Caruso Enrico, Baccarani Giorgio, Czornomaz Lukas, Daix Nicolas, Esseni David, Gnani Elena, Gnudi Antonio, Grassi Roberto, Luisier Mathieu, Markussen Troels, Osgnach Patrik, Palestri Pierpaolo, Schenk Andreas, Selmi Luca, Sousa Marilyne, Stokbro Kurt, Visciarelli Michele (2016), Comprehensive comparison and experimental validation of band-structure calculation methods in III–V semiconductor quantum wells, in Solid-State Electronics, 115, 92-102.
Efficient quantum modeling of inelastic interactions in nanodevices
Lee Y., Lannoo M., Cavassilas N., Luisier M., Bescond M. (2016), Efficient quantum modeling of inelastic interactions in nanodevices, in Physical Review B, 93(20), 205411.
Minimizing Self-Heating and Heat Dissipation in Ultrascaled Nanowire Transistors
Rhyner Reto, Luisier Mathieu (2016), Minimizing Self-Heating and Heat Dissipation in Ultrascaled Nanowire Transistors, in Nano Letters, 16(2), 1022-1026.
Soft surfaces of nanomaterials enable strong phonon interactions
Bozyigit Deniz, Yazdani Nuri, Yarema Maksym, Yarema Olesya, Lin Weyde Matteo Mario, Volk Sebastian, Vuttivorakulchai Kantawong, Luisier Mathieu, Juranyi Fanni, Wood Vanessa (2016), Soft surfaces of nanomaterials enable strong phonon interactions, in Nature, 531(7596), 618-622.
A computationally efficient non-parabolic bandstructure model for quantum transport simulations
Ziegler Anne, Frey Martin, Smith Lee, Luisier Mathieu (2015), A computationally efficient non-parabolic bandstructure model for quantum transport simulations, in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USAIEEE, New York.
Analysis of InAs-Si heterojunction double-gate tunnel FETs with vertical tunneling paths
Carrillo-Nunez Hamilton, Luisier Mathieu, Schenk Andreas (2015), Analysis of InAs-Si heterojunction double-gate tunnel FETs with vertical tunneling paths, in ESSDERC 2015 - 45th European Solid-State Device Research Conference, Graz, AustriaIEEE, New York.
Compositional bowing of band energies and their deformation potentials in strained InGaAs ternary alloys: A first-principles study
Khomyakov Petr A., Luisier Mathieu, Schenk Andreas (2015), Compositional bowing of band energies and their deformation potentials in strained InGaAs ternary alloys: A first-principles study, in Applied Physics Letters, 107(6), 062104-062104.
Enhanced impurity-limited mobility in ultra-scaled Si nanowire junctionless field-effect transistors
Ueda Akiko, Luisier Mathieu, Sano Nobuyuki (2015), Enhanced impurity-limited mobility in ultra-scaled Si nanowire junctionless field-effect transistors, in Applied Physics Letters, 107(25), 253501-253501.
FinFET to nanowire transition at 5nm design rules
Smith Lee, Munkang Choi, Frey Martin, Moroz Victor, Ziegler Anne, Luisier Mathieu (2015), FinFET to nanowire transition at 5nm design rules, in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USAIEEE, New York.
InAs-GaSb/Si heterojunction tunnel MOSFETs: An alternative to TFETs as energy-efficient switches?
Carrillo-Nunez Hamilton, Luisier Mathieu, Schenk Andreas (2015), InAs-GaSb/Si heterojunction tunnel MOSFETs: An alternative to TFETs as energy-efficient switches?, in 2015 IEEE International Electron Devices Meeting (IEDM), Washington, DCIEEE, New York.
Phonon-limited performance of single-layer, single-gate black phosphorus n- and p-type field-effect transistors
Szabo Aron, Rhyner Reto, Carrillo-Nunez Hamilton, Luisier Mathieu (2015), Phonon-limited performance of single-layer, single-gate black phosphorus n- and p-type field-effect transistors, in 2015 IEEE International Electron Devices Meeting (IEDM), Washington, DC, USAIEEE, New York.
Pushing back the limit of ab-initio quantum transport simulations on hybrid supercomputers
Calderara Mauro, Brück Sascha, Pedersen Andreas, Bani-Hashemian Mohammad H., VandeVondele Joost, Luisier Mathieu (2015), Pushing back the limit of ab-initio quantum transport simulations on hybrid supercomputers, in the International Conference for High Performance Computing, Networking, Storage and Analysis, Austin, TexasACM, New York.
SplitSolve: A fast solver for wave function based quantum transport simulations on accelerators
Calderara M., Bruck S., Luisier M. (2015), SplitSolve: A fast solver for wave function based quantum transport simulations on accelerators, in 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USAIEEE, New York.
Three-Phase Model for the Reversible Lithiation-Delithiation of SnO Anodes in Li-Ion Batteries
Pedersen Andreas, Khomyakov Petr A., Luisier Mathieu (2015), Three-Phase Model for the Reversible Lithiation-Delithiation of SnO Anodes in Li-Ion Batteries, in Physical Review Applied, 4(3), 034005.

Collaboration

Group / person Country
Types of collaboration
EPFL: group of Prof. Adrian Ionescu Switzerland (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
U. of Minnesota: group of Prof. Steven Koester United States of America (North America)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
ETHZ: group of Prof. Joost VandeVondele Switzerland (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
USI: group of Prof. Olaf Schenk Switzerland (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
U. of Tsukuba: group of Prof. Nobuyuki Sano Japan (Asia)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
ETHZ: group of Prof. Vanessa Wood Switzerland (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
ETHZ: group of Prof. Colombo Bolognesi Switzerland (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
Tyndall: group of Prof. Eoin O’Reilly Ireland (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
ETHZ: group of Prof. Lukas Novotny Switzerland (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
ETHZ: group of Prof. Andreas Schenk Switzerland (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
- Research Infrastructure
- Exchange of personnel
ETHZ: group of Prof. Christopher Hierold Switzerland (Europe)
- in-depth/constructive exchanges on approaches, methods or results
ETHZ: group of Prof. Juerg Leuthold Switzerland (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
- Exchange of personnel
EPFL: group of Prof. Nicola Marzari Switzerland (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
Synopsys Switzerland GmbH Switzerland (Europe)
- Publication
- Exchange of personnel
- Industry/business/other use-inspired collaboration
U. of Udine: group of Prof. Luca Selmi Italy (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
Samsung Korean Republic (South Korea) (Asia)
- in-depth/constructive exchanges on approaches, methods or results
- Research Infrastructure
IBM Rueschlikon: group of Dr. Heike Riel Switzerland (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
- Exchange of personnel

Scientific events

Active participation

Title Type of contribution Title of article or contribution Date Place Persons involved
MRS Spring Meeting Talk given at a conference Exploring the 2-D Material Design Space through Ab-Initio Device Simulation 17.04.2017 Phoenix, United States of America Luisier Mathieu; Szabo Aron;
Internation Electron Device Meeting Talk given at a conference First-principles Simulations of 2-D Semiconductor Devices: Mobility, I-V Characteristics, and Contact Resistance 03.12.2016 San Fransisco, United States of America Luisier Mathieu; Szabo Aron;
SISPAD Conference Talk given at a conference Atomistic simulation of nanodevices 06.09.2016 Nuernberg, Germany Luisier Mathieu; Rhyner Reto; Szabo Aron;
International Electron Device Meeting Talk given at a conference Phonon-limited performance of single-layer, single-gate black phosphorus n- and p-type field-effect transistors 07.12.2015 Washington DC, United States of America Luisier Mathieu; Szabo Aron;
SC '15 Proceedings of the International Conference for High Performance Computing, Networking, Storage and Analysis Talk given at a conference Pushing back the limit of ab-initio quantum transport simulations on hybrid supercomputers 15.11.2015 Austin, United States of America Luisier Mathieu;


Awards

Title Year
IBM Faculty Award 2016
ISC Best Visualization Award 2016
SISPAD Best Paper Award 2016

Associated projects

Number Title Start Funding scheme
149495 Exploration of Negative Capacitance Ferroelectric Device Concepts and Technologies 01.11.2013 Project funding (Div. I-III)
149454 Towards extreme-scale coupled electrothermal simulations of realistic nano-devices 01.04.2014 Project funding (Div. I-III)
175479 Ab-initio modeling of electro-thermal effects in 2-D materials: from single-layer to van der Waals heterostructure (ABIME) 01.03.2018 Project funding (Div. I-III)
133591 Physics-based Modeling of Electronic Devices at the Nanometer Scale 01.08.2011 SNSF Professorships
133591 Physics-based Modeling of Electronic Devices at the Nanometer Scale 01.08.2011 SNSF Professorships

Abstract

The goal of this project is to extend the modeling capabilities of an existing nanoelectronic device simulator called OMEN and use it to investigate electrical and thermal effects in nanostructures driven out-of-equilibrium. The emphasis will be set on incorporating more ab-initio elements into the simulation approach so that any materials or material combinations can be studied and their characteristics rapidly and precisely predicted.
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