3D-TSV; Suppressor additive; Copper interconnect; Leveler; Copper electroplating
Hai N. T. M., D. Lechner D., Stricker F, Furrer J, Broekmann P. (2015), Combined SIMS depth profiling and FIB analysis of Cu films electrodeposited under oscillatory conditions, in ChemElectroChem
, 2, 664-671.
Hai N. T. M., Furrer Julien, Barletta E., Luedi Nicola, Broekmann Peter (2014), Copolymers of imidazole and 1, 4-butandiol diglycidyl ether as an efficient suppressor additive for copper electroplating, in Journal of the Electrochemical Society
, 161(9), D381-D387.
Hai N T. M., Broekmann P., Smart Hybrid Polymers for Advanced Damascene Electroplating: Combination of Superfill and Leveling Properties, in ChemElectroChem
Within the framework of this project it is intended to develop new concepts for the superfill of large, micrometer-sized copper interconnect architectures that are needed for the future 3D-TSV (Through Silicon Via) technology. This project involves the tailored design (synthesis) of new electroplating additives, mechanistic studies on the action mode of these new types of additives at the copper/electrolyte interface under reactive conditions and finally the ultimate proof-of-principle of these concepts using state-of-the-art 3D-TSV test structures. This project is therefore going to cover topics, approaches and methodologies from both fundamental and applied research.