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Boron nitride monolayers at metal-electrode / organic-film interfaces

English title Boron nitride monolayers at metal-electrode / organic-film interfaces
Applicant Osterwalder Jürg
Number 144294
Funding scheme Project funding (Div. I-III)
Research institution Physik-Institut Universität Zürich
Institution of higher education University of Zurich - ZH
Main discipline Condensed Matter Physics
Start/End 01.10.2012 - 30.09.2014
Approved amount 226'600.00
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Keywords (13)

electroluminescence; organic electronics; graphene; chemical vapor deposition; molecular electronics; surface science; transport measurements; passivation layer; boron nitride; interfaces; scanning probes; self-assembly; epitaxial growth

Lay Summary (English)

Lead
Lay summary

This project explores the use of boronitrene films as a passivation layer at the interface between organic films or molecular layers and a metal electrode, a configuration typically appearing in organic electronics or molecular electronics. The boron nitride nanomesh, a corrugated structure with a periodicity of 3.2 nm and a corrugation amplitude of about 0.1 nm that forms spontaneously on Rh(111), will be used for its superior inertness, its strong reduction of the metal work function, and its potential for enhancing the molecular order when molecular layers are grown on top of it. The guiding question will be whether such a passivation layer can improve the stability of the organic-film / metal-electrode interface by reducing detrimental effects due to the formation of chemical bonds, while at the same time enhance the electronic coupling across the interface. Experiments will aim to connect the phenomena on the nanometer scale, characterized via our surface science analytical tools, with macroscopic effects, via transport measurements across and parallel to the interface. Moreover, organic light-emitting diode (OLED) configurations will be fabricated, both macroscopically and locally via luminescence excited with an STM tip.

Direct link to Lay Summary Last update: 21.02.2013

Responsible applicant and co-applicants

Employees

Publications

Publication
High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers
Hemmi A., Bernard C., Cun H., Roth S., Kloeckner M., Kaelin T., Weinl M., Gsell S., Schreck M., Osterwalder J., Greber T. (2014), High quality single atomic layer deposition of hexagonal boron nitride on single crystalline Rh(111) four-inch wafers, in REVIEW OF SCIENTIFIC INSTRUMENTS, 85(3), 035101-1-035101-4.
Implantation Length and Thermal Stability of Interstitial Ar Atoms in Boron Nitride Nanotents
Cun Huanyao, Iannuzzi Marcella, Hemmi Adrian, Osterwalder Juerg, Greber Thomas (2014), Implantation Length and Thermal Stability of Interstitial Ar Atoms in Boron Nitride Nanotents, in ACS NANO, 8(1), 1014-1021.
Low cost photoelectron yield setup for surface process monitoring
Hemmi Adrian, Cun Huanyao, Roth Silvan, Osterwalder Juerg, Greber Thomas (2014), Low cost photoelectron yield setup for surface process monitoring, in JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 32(2), 02302-1-02302-3.
Two-Nanometer Voids in Single-Layer Hexagonal Boron Nitride: Formation via the "Can-Opener" Effect and Annihilation by Self-Healing
Cun Huanyao, Iannuzzi Marcella, Hemmi Adrian, Osterwalder Juerg, Greber Thomas (2014), Two-Nanometer Voids in Single-Layer Hexagonal Boron Nitride: Formation via the "Can-Opener" Effect and Annihilation by Self-Healing, in ACS NANO, 8(7), 7423-7431.
Immobilizing Individual Atoms beneath a Corrugated Single Layer of Boron Nitride
Cun Huanyao, Iannuzzi Marcella, Hemmi Adrian, Roth Silvan, Osterwalder Juerg, Greber Thomas (2013), Immobilizing Individual Atoms beneath a Corrugated Single Layer of Boron Nitride, in NANO LETTERS, 13(5), 2098-2103.
Note: An ion source for alkali metal implantation beneath graphene and hexagonal boron nitride monolayers on transition metals
de Lima L. H., Cun H. Y., Hemmi A., Kaelin T., Greber T. (2013), Note: An ion source for alkali metal implantation beneath graphene and hexagonal boron nitride monolayers on transition metals, in REVIEW OF SCIENTIFIC INSTRUMENTS, 84(12), 126104-1-126104-3.

Collaboration

Group / person Country
Types of collaboration
Dr. Hermann Sachdev / Anorganische Chemie / Universität des Saarlandes Germany (Europe)
- in-depth/constructive exchanges on approaches, methods or results
Dr. Oliver Gröning / EMPA Dübendorf Switzerland (Europe)
- in-depth/constructive exchanges on approaches, methods or results
Prof. Michael S Altman / UST / Hongkong Hongkong (Asia)
- in-depth/constructive exchanges on approaches, methods or results
Dr. Ari Seitsonen/ Physikalische Chemie UZH Switzerland (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
Prof. Peter Blaha / Technische Chemie / TU Wien Austria (Europe)
- in-depth/constructive exchanges on approaches, methods or results
Prof. Steven DeFeyter / Katholieke Universiteit Leuven Belgium (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
- Research Infrastructure
- Exchange of personnel
Prof. Frank Nüesch / EMPA Dübendorf Switzerland (Europe)
- in-depth/constructive exchanges on approaches, methods or results
Dr. Matthias Schreck / Festkörperphysik / Uni Augsburg Germany (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
Prof. Hongjun Gao / IOP CAS / Beijing China (Asia)
- in-depth/constructive exchanges on approaches, methods or results
- Publication
- Exchange of personnel

Scientific events

Active participation

Title Type of contribution Title of article or contribution Date Place Persons involved
AVS 61st International Symposium and Exhibition Talk given at a conference Cutting and assembling 2nm voids in single layer hexagonal boron nitride 10.11.2014 Baltimore, MD, United States of America Greber Thomas;
73th IUVSYA Workshop Talk given at a conference Self-assembly of 2 nm voids in hexagonal boron nitride on rhodium: creation and annihilation 26.09.2014 Eisenerz, Austria Greber Thomas;
Seminar Talk given at a conference Ion implantation beneath a corrugated monolayer of boron nitride: nanotents, "can-opener" effect and self healing 29.08.2014 EMPA Dübendorf, Switzerland Cun Huanyao;
International Workshop on Nanomaterials and Nanodevices Talk given at a conference Nanotent and 2nm void formation in sp2 hybridized single layer materials 01.07.2014 Beijing, China Greber Thomas;
Materials Research Society Spring Meeting Talk given at a conference Ion implantation beneath a corrugated single layer of boron nitride: nanotent formation and 'can-opener' effect 22.04.2014 San Francisco, CA, United States of America Cun Huanyao;
Symposium on Surface and Nano Science (SSNS14) Talk given at a conference Nanotents 17.01.2014 Furano, Japan Greber Thomas;
International Symposium on Atomic Level Characterization (ALC'13) Talk given at a conference Nanotents and controlled 2 nm hole formation in single layers of graphene and hexagonal boron nitride 15.12.2013 Kona, Hawaii, United States of America Greber Thomas;
International Vacuum Congress (IVC-19) Talk given at a conference Functionalities from corrugated sp2-bonded monolayers 13.09.2013 Paris, France Osterwalder Jürg;
1st Hayashi Conference Talk given at a conference Surface science approach to graphene and boronitrene (keynote talk) 19.07.2013 Hayama, Japan Osterwalder Jürg;
International Workshop on Nanomaterials and Nanodevices Talk given at a conference sp2-hybridized single layers: from templates to nanotents 02.07.2013 Beijing, China Greber Thomas;
Graphene Week 2013 Talk given at a conference Nanotents - immobilizing single atoms beneath a monolayer of boron nitride 07.06.2013 Chemnitz, Germany Cun Huanyao;


Awards

Title Year
Forschungskredit der Universität Zürich - postdoc fellowship for 10 months 2014

Associated projects

Number Title Start Funding scheme
153312 Surface physics with single-layer materials and molecular layers 01.04.2014 Project funding (Div. I-III)

Abstract

This project explores the use of boronitrene films as a passivation layer at the interface between organic films or molecular layers and a metal electrode, a configuration typically appearing in organic electronics or molecular electronics. The boron nitride nanomesh, a corrugated structure with a periodicity of 3.2 nm and a corrugation amplitude of about 0.1 nm that forms spontaneously on Rh(111), will be used for its superior inertness, its strong reduction of the metal work function, and because of its potential for enhancing the molecular order when molecular layers are grown on top of it. The guiding question will be whether such a passivation layer can improve the stability of the organic-film / metal-electrode interface by reducing detrimental effects due to the formation of chemical bonds, while at the same time enhance the electronic coupling across the interface. Experiments will aim to connect the phenomena on the nanometer scale, characterized via our surface science analytical tools, with macroscopic effects, via transport measurements across and parallel to the interface. Moreover, organic light-emitting diode (OLED) configurations will be fabricated, both macroscopically and locally via luminescence excited with an STM tip.
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