Resonant body transistors (RBT); Resonators; Dielectrically transduction; Nanoelectronics
W. A. Vitale, E. A. Casu, A. Biswas, T. Rosca, C. Alper (2017), A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor, in Scientific Reports
, 7(355), 1-10.
E. A. Casu, W. A. Vitale, N. Oliva, T. Rosca, A. Biswas (2017), Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking, in 2016 IEEE International Electron Devices Meeting (IEDM)
M. Fernández-Bolaños, W. A. Vitale, M Maqueda López, Ionescu Adrian M (2016), 3D TSV Based High Frequency Components for RF IC and RF MEMS Applications, in IEEE 3D System Integration Conference - 3DIC
E. A. Casu, M. Maqueda López, W. A. Vitale, M. Fernández-Bolaños, A. M. Ionescu (2016), Design and Fabrication of High-K Filled Sub-100 nm Gap Resonators with Embedded Dielectric Field Effect Transistor for Ultra High Frequency Applications, in Silicon Nanoelectronics Workshop (SNW), 2016 IEEE
W. A. Vitale, M. Tamagnone, C. F. Moldovan, N. Emond, E. A. Casu, A. M. Ionescu (2016), Field-enhanced design of steep-slope VO2 switches for low actuation voltage, in ESSDERC 2016 - 46th European Solid-State Device Research Conference
M. Maqueda López, E. A. Casu, V. A. Vitale, A. M. Ionescu (2016), Solid-Gap Resonators Based on PVDF-TrFE, in Silicon Nanoelectronics Workshop (SNW), 2016 IEEE
M. Maqueda López, M. Fernández-Bolaños, W. A. Vitale, A. M. Ionescu (2015), Solid-Gap Wine-Glass Mode Disks VB-FET Resonators applied to biomass sensing, in Microelectronic Engineering
, 145, 53.
M. Maqueda López, E. A. Casu, A. M. Ionescu, M. Fernández-Bolaños, Lowering Motional Resistance by partially HfO2 gap filling in Double-Ended Tuning Fork MEMS resonators, in 2017 European Frequency & Time Forum/IEEE Int'l Frequency Control Symposium
This proposal addresses the challenging issues of the design and fabrication of solid-gap FET resonators which consist of embedding a field effect transistor (FET) in the body of a clamped-clamped-beam and filled with a solid dielectric gap to enhance the transduction efficiency. As shown in the technical description such architecture combines the benefit of FET detection mechanisms with the advantages of a medium/high-k dielectric in terms of transduction efficiency for high frequency applications. Solid-gap resonators are expected to be excited in higher mode of resonances in order to achieve GHz frequencies with acceptably low motional resistance and high quality Q-factor.The proposed resonators will have frequency scaling capabilities based on design flexibility and CMOS compatible process and materials. We plan full demonstration of novel functionalities such as filtering, mixing or extreme mass sensing for RF applications. Difference configurations designs providing temperature compensation mechanisms and parasitic feedthrough capacitance cancelation will be conceived. Technologically, we plan to scale the fin-FET resonators, to investigate most performing dielectrics reducing impedance mismatching issues and to develop a seal encapsulation for the resonators.