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Solid-Gap Resonators

English title Solid-Gap Resonators
Applicant Ionescu Mihai Adrian
Number 144268
Funding scheme Project funding (Div. I-III)
Research institution Laboratoire des dispositifs nanoélectroniques EPFL - STI - IEL - NANOLAB
Institution of higher education EPF Lausanne - EPFL
Main discipline Microelectronics. Optoelectronics
Start/End 01.03.2013 - 28.02.2017
Approved amount 469'536.00
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All Disciplines (3)

Discipline
Microelectronics. Optoelectronics
Mechanical Engineering
Electrical Engineering

Keywords (4)

Resonant body transistors (RBT); Resonators; Dielectrically transduction; Nanoelectronics

Lay Summary (French)

Lead
Le projet propose l'investigation d'une nouvelle classe de résonateurs MEMS/NEMS: des transistors résonants, à gap rempli par un diélectrique à haute permittivité, visant des applications haute fréquence (GHz). Cette nouvelle technologie sera compatible avec celles de circuits intégrés avancés.
Lay summary

Le projet ''Solid-Gap Resonators'' propose l’exploration et le développement d’une nouvelle classe de résonateurs MEMS/NEMS: des transistors résonants, à gap rempli par un diélectrique à haute permittivité, visant des applications dans le domaines des hautes fréquences (GHz).Il s'agit de résonateurs actifs, qui ont la capabilité d'amplifier le signal appliqué à leur entrée.

Cette nouvelle technologie sera compatible avec celles de circuits intégrés avancés et avec des techniques de packaging wafer-level. Au délà des applications en communications, nous envisageons des possibles utilisations de ces nouveaux composants comme capteurs intégrés.

Direct link to Lay Summary Last update: 08.03.2013

Responsible applicant and co-applicants

Employees

Publications

Publication
A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor
W. A. Vitale, E. A. Casu, A. Biswas, T. Rosca, C. Alper (2017), A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor, in Scientific Reports, 7(355), 1-10.
Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking
E. A. Casu, W. A. Vitale, N. Oliva, T. Rosca, A. Biswas (2017), Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking, in 2016 IEEE International Electron Devices Meeting (IEDM), 4.
3D TSV Based High Frequency Components for RF IC and RF MEMS Applications
M. Fernández-Bolaños, W. A. Vitale, M Maqueda López, Ionescu Adrian M (2016), 3D TSV Based High Frequency Components for RF IC and RF MEMS Applications, in IEEE 3D System Integration Conference - 3DIC, 1-4.
Design and Fabrication of High-K Filled Sub-100 nm Gap Resonators with Embedded Dielectric Field Effect Transistor for Ultra High Frequency Applications
E. A. Casu, M. Maqueda López, W. A. Vitale, M. Fernández-Bolaños, A. M. Ionescu (2016), Design and Fabrication of High-K Filled Sub-100 nm Gap Resonators with Embedded Dielectric Field Effect Transistor for Ultra High Frequency Applications, in Silicon Nanoelectronics Workshop (SNW), 2016 IEEE, 2.
Field-enhanced design of steep-slope VO2 switches for low actuation voltage
W. A. Vitale, M. Tamagnone, C. F. Moldovan, N. Emond, E. A. Casu, A. M. Ionescu (2016), Field-enhanced design of steep-slope VO2 switches for low actuation voltage, in ESSDERC 2016 - 46th European Solid-State Device Research Conference, 352-355.
Solid-Gap Resonators Based on PVDF-TrFE
M. Maqueda López, E. A. Casu, V. A. Vitale, A. M. Ionescu (2016), Solid-Gap Resonators Based on PVDF-TrFE, in Silicon Nanoelectronics Workshop (SNW), 2016 IEEE, 2.
Solid-Gap Wine-Glass Mode Disks VB-FET Resonators applied to biomass sensing
M. Maqueda López, M. Fernández-Bolaños, W. A. Vitale, A. M. Ionescu (2015), Solid-Gap Wine-Glass Mode Disks VB-FET Resonators applied to biomass sensing, in Microelectronic Engineering, 145, 53.
Lowering Motional Resistance by partially HfO2 gap filling in Double-Ended Tuning Fork MEMS resonators
M. Maqueda López, E. A. Casu, A. M. Ionescu, M. Fernández-Bolaños, Lowering Motional Resistance by partially HfO2 gap filling in Double-Ended Tuning Fork MEMS resonators, in 2017 European Frequency & Time Forum/IEEE Int'l Frequency Control Symposium, 1285.

Collaboration

Group / person Country
Types of collaboration
Advanced NEMS group/EPFL Switzerland (Europe)
- in-depth/constructive exchanges on approaches, methods or results
- Research Infrastructure

Scientific events

Active participation

Title Type of contribution Title of article or contribution Date Place Persons involved
46th European Solid-State Device Research Conference Talk given at a conference Field-enhanced design of steep-slope VO2 switches for low actuation voltage 12.09.2016 Lausanne, Switzerland Ionescu Mihai Adrian; Casu Emanuele Andrea;
Silicon Nanoelectronics Workshop (SNW), 2016 Poster Design and Fabrication of High-K Filled Sub-100 nm Gap Resonators with Embedded Dielectric Field Effect Transistor for Ultra High Frequency Applications 12.06.2016 Honolulu, United States of America Casu Emanuele Andrea;
Silicon Nanoelectronics Workshop (SNW), 2016 Poster Solid-Gap Resonators Based on PVDF-TrFE 12.06.2016 Honolulu, United States of America Casu Emanuele Andrea;
CMI annual review meeting 2014, 2015, 2016 Poster SOLID-GAP MEMS RESONATOR BASED ON PVDF-TRFE 03.05.2016 Lausanne, Switzerland Ionescu Mihai Adrian; Maqueda López Mariazel; Fernández-Bolaños Badía Montserrat; Casu Emanuele Andrea;
CMI annual review meeting, 2014, 2015, 2016 Poster RF MEM RESONATOR WITH EMBEDDED HFO2 GATE DIELECTRIC FETS 03.05.2016 Lausanne, Switzerland Maqueda López Mariazel; Fernández-Bolaños Badía Montserrat; Ionescu Mihai Adrian; Casu Emanuele Andrea;
40th Micro and Nano Engineering Conference Poster Solid-Gap Wine-Glass Mode Disks VB-FET Resonators applied to biomass sensing 22.09.2014 Lausanne, Switzerland Maqueda López Mariazel; Casu Emanuele Andrea; Ionescu Mihai Adrian;
40th Micro and Nano Engineering Conference Poster Single Crystal Silicon UHF Wine-Glass Ring Resonator with HfO2 Solid Dielectric Gap embedded in a Field Effect Transistor 22.09.2014 Lausanne, Switzerland Maqueda López Mariazel; Ionescu Mihai Adrian; Casu Emanuele Andrea;


Knowledge transfer events

Active participation

Title Type of contribution Date Place Persons involved
NEREID 2nd General Workshop European Roadmaping Performances, exhibitions (e.g. for education institutions) 06.04.2017 Athens, Greece Fernández-Bolaños Badía Montserrat;
Domain Workshop Smart Sensors Performances, exhibitions (e.g. for education institutions) 21.10.2016 Bertinoro, Italy Fernández-Bolaños Badía Montserrat;


Associated projects

Number Title Start Funding scheme
177011 Ultra High Frequency Vibrometer for MEMS/NEMS characterization 01.03.2018 R'EQUIP
170759 HF Vapor Etcher for Stiction Free Release of Suspended Micro- and Nanostructures 01.12.2016 R'EQUIP

Abstract

This proposal addresses the challenging issues of the design and fabrication of solid-gap FET resonators which consist of embedding a field effect transistor (FET) in the body of a clamped-clamped-beam and filled with a solid dielectric gap to enhance the transduction efficiency. As shown in the technical description such architecture combines the benefit of FET detection mechanisms with the advantages of a medium/high-k dielectric in terms of transduction efficiency for high frequency applications. Solid-gap resonators are expected to be excited in higher mode of resonances in order to achieve GHz frequencies with acceptably low motional resistance and high quality Q-factor.The proposed resonators will have frequency scaling capabilities based on design flexibility and CMOS compatible process and materials. We plan full demonstration of novel functionalities such as filtering, mixing or extreme mass sensing for RF applications. Difference configurations designs providing temperature compensation mechanisms and parasitic feedthrough capacitance cancelation will be conceived. Technologically, we plan to scale the fin-FET resonators, to investigate most performing dielectrics reducing impedance mismatching issues and to develop a seal encapsulation for the resonators.
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