Nanotechnology; Scanning probe microscopy; Heat transport; Charge transport; Hot spot
Menges Fabian, Motzfeld Fabian, Schmid Heinz, Mensch Philipp, Dittberner Matthias, Karg Siegfried, Riel Heike, Gotsmann Bernd (2016), Local thermometry of self-heated nanoscale devices, in IEEE International Electron Devices Meeting (IEDM)
, San FranciscoIEEE, New York.
Menges Fabian, Riel Heike, Stemmer Andreas, Gotsmann Bernd (2016), Nanoscale thermometry by scanning thermal microscopy, in Review of Scientific Instruments
, 87, 074902.
Menges Fabian, Mensch Philipp, Schmid Heinz, Riel Heike, Stemmer Andreas, Gotsmann Bernd (2016), Temperature mapping of operating nanoscale devices by scanning probe thermometry, in Nature Communications
, 7, 1087.
Wagner Tino, Beyer Hannes, Reissner Patrick, Mensch Philipp, Riel Heike, Gotsmann Bernd, Stemmer Andreas (2015), Kelvin probe force microscopy for local characterisation of active nanoelectronic devices, in Beilstein Journal of Nanotechnology
, 6, 2193-2206.
Meier Tobias, Menges Fabian, Nirmalraj Peter, Hoelscher Hendrik, Riel Heike, Gotsmann Bernd (2014), Length-Dependent Thermal Transport along Molecular Chains, in Physical Review Letters
, 113(6), 060801.
Gotsmann Bernd, Menges Fabian, Karg Siegfried F., Troncale Valentina, Lantz Mark A., Mensch Philipp F J, Schmid Heinz, Das Kanungo Pratyush, Drechsler Ute, Schmidt Volker, Tschudy Meinrad, Stemmer Andreas, Riel Heike (2013), Heat dissipation and thermometry in nanosystems: When interfaces dominate, in Device Research Conference - Conference Digest, DRC
Menges Fabian, Riel Heike, Stemmer Andreas, Dimitrakopoulos Christos, Gotsmann Bernd (2013), Thermal Transport into Graphene through Nanoscopic Contacts, in Physical Review Letters
, 111(20), 205901.
Menges F, Riel H, Stemmer A, Gotsmann B (2012), Quantitative Thermometry of Nanoscale Hot Spots, in NANO LETTERS
, 12(2), 596-601.
With increasing integration densities and performance improvements in microelectronics nanoscale characterization methods become important. While structural characterization is based on numerous well-established methods, thermal and electrical characterization is lacking.Local heat production limits the performance and speed that a chip can be operated at. It leads to the formation of so-called hot spots. To date there is no method readily available to test devices with sufficient precision (~10 ºC) and resolution (~10 nm) to characterize and understand such hot spots. The electrical characterization on the nanoscale is of similar relevance. In field effect transistors (FETs), for example, one of the most pressing issues today is to be able to produce highly defined doping regions. Both thermal and electrical characterization is linked to open questions of fundamental science. For example, thermal conduction in nanoscale structures is not well understood due to its complexity as essentially a non-equilibrium problem. Furthermore, in nanoscale electronic devices currently being explored, the simultaneous determination of both thermal and electronic properties during operation becomes decisive. None of the two can be understood properly without regarding the other.The proposed research project aims at solving such issues using new developments in scanned probe microscopy with a suitable electrical and thermal characterization at lateral resolutions in the nanometer range.In a first work package, a scanning thermal microscopy (SThM) setup will be developed and, for the first time, will allow measuring temperature distributions with an anticipated 10 ºC and 10 nm resolution.A second work package will bring Kelvin probe force microscopy (KFM) to a stage where local distributions of charge, surface potential and doping levels at lateral resolutions in the 1-5 nanometer range can be detected on actual devices.In a third work package, the two techniques shall be combined to give the full characterization of the same devices. This will allow determination of the respective shifts of hot-spots with respect to local potential drops and the mutual feedback of both electronic and thermal transport.