Project

Back to overview

Nanofabricated devices based on intrinsically layered correlated electron materials

English title Nanofabricated devices based on intrinsically layered correlated electron materials
Applicant Ronnow Henrik M.
Number 126751
Funding scheme Project funding (Div. I-III)
Research institution Laboratoire de magnétisme quantique EPFL - SB - IPMC - LQM
Institution of higher education EPF Lausanne - EPFL
Main discipline Condensed Matter Physics
Start/End 01.12.2009 - 31.07.2013
Approved amount 307'870.00
Show all

Keywords (5)

Manganites; Magnetoresistance; CMR; Spintronics; Magnetic switching

Lay Summary (English)

Lead
Lay summary
We propose a project aimed at developing new solid state devices by combining state-of-the-art nanofabrication with the exciting materials of contemporary condensed matter physics. Strongly correlated electron effects provide several classes of emerging transition-metal oxides with remarkable transport properties, including high-Tc superconductivity in layered cuprates and colossal magneto-resistance (CMR) in the cubic, layered and bi-layered manganites. In particular, the layered materials offer themselves as promising candidates for micro-fabrication of mesoscopic devices testing and exploiting their unique and tunable transport properties. We aim to fabricate and investigate devices based on the bilayer manganite La1.4Sr1.6Mn2O7, which orders magnetically below 90K, at which point both in-plane and c-axis resistivity de-crease by 2-3 orders of magnitude. Our mesoscopic devices will have dimensions comparable to a typical domain, allowing us to study structures going from a single domain to several domains. The first goal is to prove the proposed transport mechanism. Subsequently, our ambition is to control the domain wall structure in order to create spintronic devices. A single domain should exhibit enormous magnetoresistance (higher than giant magnetoresistance currently holding the record) at the magnetic field where adjacent layers switch from antiferromagnetic to ferromagnetic alignment. Exploiting the intrinsic spin-valve nature of this layered material for spintronic gates may bring significant advances in sizing and performance compared to artificially constructed multilayer structures and could lead to development of novel types of nonvolatile computer memory such as racetrack memory. While the current proposal concern a specifically selected material with a detailed research plan, it should be viewed as the starting point for wider activities with the general idea of coupling traditional solid state physics with nanofabrication technologies. Nanofabrication enables new fundamental studies of these materials and on the other hand also serves as a test-bed for practical applications of mesoscopic devices based on highly correlated electron systems.
Direct link to Lay Summary Last update: 21.02.2013

Responsible applicant and co-applicants

Employees

Name Institute

Publications

Publication
Electric field control of the skyrmion lattice in Cu2OSeO3
White J. S., Levatic I., Omrani A. A., Egetenmeyer N., Prsa K., Zivkovic I., Gavilano J. L., Kohlbrecher J., Bartkowiak M., Berger H., Ronnow H. M. (2012), Electric field control of the skyrmion lattice in Cu2OSeO3, in JOURNAL OF PHYSICS-CONDENSED MATTER, 24(43), 432201.
Magnetic hourglass dispersion and its relation to high-temperature superconductivity in iron-tuned Fe1+yTe0.7Se0.3
Tsyrulin N., Viennois R., Giannini E., Boehm M., Jimenez-Ruiz M., Omrani A. A., Piazza B. Dalla, Ronnow H. M. (2012), Magnetic hourglass dispersion and its relation to high-temperature superconductivity in iron-tuned Fe1+yTe0.7Se0.3, in NEW JOURNAL OF PHYSICS, 14, 073025.
Micro-fabrication process for small transport devices of layered manganite
Omrani A. A., Deng G., Radenovic A., Kis A., Ronnow H. M. (2012), Micro-fabrication process for small transport devices of layered manganite, in JOURNAL OF APPLIED PHYSICS, 111(7), 07E129.

Associated projects

Number Title Start Funding scheme
122969 Managed Software Evolution 01.01.2009 ProDoc
116590 From Quantum Phase transitions to Addressable Spin Clusters 01.04.2007 Project funding (Div. I-III)
141962 Mott Physics Beyond the Heisenberg Model in Iridates and Related Materials 01.01.2013 Sinergia
146870 Quantum Magnetism - Spinons, Skyrmions and Dipoles 01.04.2013 Project funding (Div. I-III)
122044 Electrical response of strained nanoribbons 01.10.2008 Project funding (Div. I-III)
121397 Sub-Kelvin high sensitivity magnetometer for magnetic materials exploration 01.07.2008 R'EQUIP
144972 High efficiency neutron spectrometer optimized for investigations under extreme conditions 01.01.2014 R'EQUIP

Abstract

We propose a project aimed at developing new solid state devices by combining state-of-the-art nanofabrication with the exciting materials of contemporary condensed matter physics. Strongly correlated electron effects provide several classes of emerging transition-metal oxides with remarkable transport properties, including high-Tc superconductivity in layered cuprates and colossal magneto-resistance (CMR) in the cubic, layered and bi-layered manganites. In particular, the layered materials offer themselves as promising candidates for micro-fabrication of mesoscopic devices testing and exploiting their unique and tunable transport properties. We aim to fabricate and investigate devices based on the bilayer manganite La1.4Sr1.6Mn2O7, which orders magnetically below 90K, at which point both in-plane and c-axis resistivity de-crease by 2-3 orders of magnitude. Our mesoscopic devices will have dimensions comparable to a typical domain, allowing us to study structures going from a single domain to several domains. The first goal is to prove the proposed transport mechanism. Subsequently, our ambition is to control the domain wall structure in order to create spintronic devices. A single domain should exhibit enormous magnetoresistance (higher than giant magnetoresistance currently holding the record) at the magnetic field where adjacent layers switch from antiferromagnetic to ferromagnetic alignment. Exploiting the intrinsic spin-valve nature of this layered material for spintronic gates may bring significant advances in sizing and performance compared to artificially constructed multilayer structures and could lead to development of novel types of nonvolatile computer memory such as racetrack memory. While the current proposal concern a specifically selected material with a detailed research plan, it should be viewed as the starting point for wider activities with the general idea of coupling traditional solid state physics with nanofabrication technologies. Nanofabrication enables new fundamental studies of these materials and on the other hand also serves as a test-bed for practical applications of mesoscopic devices based on highly correlated electron systems.
-